Si纳米线的制备方法与器件应用

doi:10.3969/j.issn.1000-1565.2009.01.023

摘要/Abstract

摘要： 以气-液-固(VLS)、气-固-固(VSS)、固-液-固(SLS)和氧化物辅助生长(OAG)机制为主线,着重介绍与评论了几种主要的Si纳米线的制备方法,如激光烧蚀沉积(LAD)、化学气相沉积(CVD)、热蒸发和金属(Au,Fe,Ni和Al)催化生长等.简要介绍了Si纳米线及其阵列在场效应晶体管、场发射器件、太阳电池、传感器以及集成电子器件等方面的应用.最后,讨论了各种制备方法的优势与不足,指出了该研究领域今后的发展方向.

关键词: Si纳米线, 制备方法, 生长机制, 器件应用

中图分类号:

TB383

彭英才,范志东,白振华. Si纳米线的制备方法与器件应用[J]. 河北大学学报(自然科学版), 2009, 29(1): 99-105.

PENG Ying-cai,FAN Zhi-dong,BAI Zhen-hua. Fabrication and Device Application of Si Nanowires[J]. Journal of Hebei University (Natural Science Edition), 2009, 29(1): 99-105.

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