[1] 李金隆, 张鹰, 邓新武, 刘兴钊, 陶伯万, 李言荣. 外延薄膜生长的实时监测分析研究 [J]. 功能材料 2004.doi:10.3321/j.issn:1001-9731.2004.02.046
[2] Ezhilvalavan S, Samper V, Seng TW, Xue JM, Wang J. Ferroelectric properties and leakage current characteristics of radio-frequency-sputtered SrBi2(V0.1Nb0.9)(2)O-9 thin films [J]. Journal of Applied Physics 2004, 4(4).
[3] Song-Min NAM, Takaaki TSURUMI. In Situ Epitaxial Growth of Lead Zirconate Titanate Films by Bias Sputtering at High RF Power [J]. Japanese journal of applied physics 2004, 5a(5a).
[4] Takeshi MATSUMOTO, Atsushi NIINO, Yasunori OHTSU, Tatsuya MISAWA, Akira YONESU, Hiroharu FUJITA, Shoji MIYAKE. Influence of Substrate Biasing on (Ba, Sr)TiO_3 Films Prepared by Electron Cyclotron Resonance Plasma Sputtering [J]. Japanese journal of applied physics 2004, 3(3).
[5] A. Lookman, R. M. Bowman, J. M. Gregg, J. Kut, S. Rios, M. Dawber, A. Ruediger, J. F. Scott. Thickness independence of true phase transition temperatures in barium strontium titanate films [J]. Journal of Applied Physics 2004, 1(1).
[6] CHAN K Y, TSANG W S, MAK C L. Effects of composition of PbTiO3 on optical properties of (1-x)PbMg1/3Nb2/3O3-xPbTiO3 thin films [J]. Physical Review 2004, B69.
[7] Kim YM., Kim HG., Lee WJ.. DEPOSITION OF PZT FILMS BY MOCVD AT LOW TEMPERATURE AND THEIR CHANGE IN PROPERTIES WITH ANNEALING TEMPERATURE AND ZR/TI RATIO [J]. Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films 1996, 1/2(1/2).
[8] TAKAHIRO OIKAWA, HITOSHI MORIOKA, ATSUSHI NAGAI. Thickness scaling of poiycrystalline Pb(Zr, Ti)O3 films down to 35 nm prepared by metalorganic chemical Vapor deposition having good ferroelectric properties [J]. Applied Physics Letters 2004, 85.
[9] HIROSHI FUNAKUBO, GOUJI ASANO, TOMOHIKO OZEKI. Effect of solvent on MOCVD of Pb(Zr, Ti)O3 films liquid-delivery source supply method [J]. Journal of the Electrochemical Society 2004, 151(07).
[10] Ho-Jung SUN, Eun Seok CHOI, Tae Kwon LEE, Tae Eun HONG, Jun-Mo YANG, Soon Yong KWEON, Nam Kyeong KIM, Seung Jin YEOM, Jae-Sung ROH, Hyun-chul SOHN, Jin Woong KIM. Effects of High-Temperature Metal-Organic Chemical Vapor Deposition of Pb(Zr, Ti)O_3 Thin Films on Structural Stabilities of Hybrid Pt/IrO_2/Ir Stack and Single-Layer Ir Bottom Electrodes [J]. Japanese journal of applied physics 2004, 5a(5a).
[11] Zhai JW, Hung TF, Chen HD. Relaxor and nonlinear behaviors of SrTiO3/BaTiO3 multilayers derived by a sol-gel process [J]. Applied physics letters 2004, 11(11).
[12] K. MAKI, B. T. LIU, Y. SO. Low-Temperature Fabrication of Epitaxial and Random-Oriented Pb(Zr, Ti)O_3 Capacitors with SrRuO_3 Electrodes on Si Wafers [J]. Integrated Ferroelectrics 2003, 1(1).
[13] Electric fatigue in Pb(Nb, Zr, Sn, Ti)O_(3) thin films grown by a sol-gel process [J]. Applied physics letters 2003, 5(5).
[14] MAKI K, 刘保亭, H VU. Controlling crystallization of Pb(Zr, Ti)O3 thin films on IrO2 electrodes at low-temperature through interface engineering Low-temperature integration of epitaxial ferroelectric capacitors on Si using STO as a template [J]. Applied Physics Letters 2003, 82.
[15] Dabrowska-Szata M.. Analysis of RHEED pattern from semiconductor surfaces [J]. Materials Chemistry and Physics 2003, 2/3(2/3).
[16] Masek K., Moroz V., Matolin V.. Reflection high-energy electron loss spectroscopy (RHEELS): a new approach in the investigation of epitaxial thin film growth by reflection high-energy electron diffraction (RHEED) [J]. Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology 2003, 1/2(1/2).
[17] WIDMANN F, DAUDIN B, FEUILLET G. Evidence of 2D-3D transition during the first stages of GaN growth on AlN [J]. MRS Internet Journal of Nitride Semiconductor Research 1997, 2. |
