碲化铋热电薄膜的电沉积制备与形貌分析

  • 刘磊 ,
  • 苏杰 ,
  • 马昊 ,
  • 张汉 ,
  • 高玉微
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  • 1.河北大学电子信息工程学院,河北保定,071002; 2.中国科学院半导体研究所,北京,100083

网络出版日期: 2014-01-25

基金资助

国家自然科学基金资助项目,河北大学自然科学研究计划项目,河北省自然科学基金资助项目

Preparation by electrodeposition and morphology analysis of bismuth telluride thermoelectric films

  • LIU Lei ,
  • SU Jie ,
  • MA Hao ,
  • ZHANG Han ,
  • GAO Yuwei
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Online published: 2014-01-25

摘要

采用电化学沉积法在不锈钢衬底上制备了碲化铋(Bi2Te3)化合物热电薄膜,并利用XRD(X线衍射分析)、SEM(扫描电镜)和AFM(原子力显微镜)对薄膜进行物相分析和形貌观察.首先通过循环伏安法分别对Bi3+和HTeO2+以及他们共存的HNO3溶液进行了测试,确定了Bi2Te3的电化学生长为互诱导二元共沉积过程.然后在-50 mV电位,20 rmA.cm-2电流密度进行电沉积得到Bi2Te3多晶薄膜,XRD分析显示薄膜沿着(110)晶向存在一定程度的择优取向生长.进一步改变沉积电流密度发现,提高沉积电流密度使薄膜晶粒尺寸变小.

本文引用格式

刘磊 , 苏杰 , 马昊 , 张汉 , 高玉微 . 碲化铋热电薄膜的电沉积制备与形貌分析[J]. 河北大学学报(自然科学版), 2014 , 34(1) : 23 -27 . DOI: 10.3969/j.issn.1000-1565.2014.01.005

参考文献

[1] 侯杰, 杨君友, 朱文, 郜鲜辉, HOU Jie, YANG Jun-you, ZHU Wen, GAO Xian-hui. Bi2Te3热电薄膜的电化学原子层外延制备 [J]. 功能材料 2006.doi:10.3321/j.issn:1001-9731.2006.07.012
[2] 贾法龙, 王为, 黄庆华, 朱静, JIA Fa-long, WANG Wei, HUANG Qing-hua, ZHU Jing. 电化学制备Bi2Te3纳米线用于微型温差发电器 [J]. 纳米技术与精密工程 2006.doi:10.3969/j.issn.1672-6030.2006.01.003
[3] ROWE D M. CRC Handbook of Thermoelectrics [M]. {H}New York:CRC Press 1995.
[4] ROWE D M. Thermoelectrics Handbook Nano to Macro [M]. Taylor & Francis:CRC Press 2006.
[5] ZHANG Y, WANG X L, YEOH W K. Electrical and thermoelectric properties of single-wall carbon nanotube doped Bi2Te3 [J]. {H}Applied Physics Letters 2012, 101.
[6] ZHANG Y L, MEHTA R J, BELLEY M. Lattice thermal conductivity diminution and high thermoelectric power factor retention in nanoporous macroassemblies of sulfur-doped bismuth telluride nanocrystals [J]. {H}Applied Physics Letters 2012, 100.
[7] Takashiri M, Takiishi M, Tanaka S, Miyazaki K, Tsukamoto H. Thermoelectric properties of n-type nanocrystalline bismuth-telluride-based thin films deposited by flash evaporation [J]. Journal of Applied Physics 2007, 7(7).
[8] Desalegne Teweldebrhan, Vivek Goyal, Muhammad Rahman, Alexander A. Balandin. Atomically-thin crystalline films and ribbons of bismuth telluride [J]. Applied physics letters 2010, 5(5).
[9] W. Zhu, J. Y. Yang, X. H. Gao, S. Q. Bao, X. A. Fan, T. J. Zhang, K. Cui. Effect of potential on bismuth telluride thin film growth by electrochemical atomic layer epitaxy [J]. Electrochimica Acta 2005, 20(20).
[10] Wei Wang, Qinghua Huang, Falong Jia, Jing Zhu. Electrochemically assembled p-type Bi_(2)Te_(3) nanowire arrays [J]. Journal of Applied Physics 2004, 1(1).
[11] Michel S, Diliberto S, Boulanger C, Stein N, Lecuire JM. Galvanostatic and potentiostatic deposition of bismuth telluride films from nitric acid solution: effect of chemical and electrochemical parameters [J]. Journal of Crystal Growth 2005, 1/4(1/4).
[12] TAKASHIRI M, MIYAZAKI K, TANAKA S. Effect of grain size on thermoelectric properties of n-type nanocrystalline bismuth-telluride based thin films [J]. {H}Journal of Applied Physics 2008, 104.
[13] Kim JH, Jeong DY, Kim JS, Ju BK. Metal organic vapor phase epitaxy of BiSbTe3 films on (001) GaAs vicinal substrates [J]. Journal of Applied Physics 2006, 12(12).
[14] Peranio N, Eibl O, Nurnus J. Structural and thermoelectric properties of epitaxially grown Bi2Te3 thin films and superlattices [J]. Journal of Applied Physics 2006, 11(11).
[15] Marisol S. Martin-Gonzalez, Amy L. Prieto, Ronald Gronsky. Insights into the Electrodeposition of Bi_2Te_3 [J]. Journal of the Electrochemical Society 2002, 11(11).
[16] B. Yoo, F. Xiao, K. N. Bozhilov, J. Herman, M. A. Ryan, N. V. Myung. Electrodeposition of Thermoelectric Superlattice Nanowires [J]. Advanced Materials 2007, 26(26).
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