为了研究外加电场对脉冲激光沉积纳米Si晶粒的影响,采用XeCl准分子激光器,烧蚀高阻抗单晶Si靶,在10 Pa氩气环境下,调整外加电压的强度,沉积制备了一系列Si薄膜.X线衍射(XRD)谱仪、拉曼(Raman)谱、扫描电子显微镜(SEM)图像均显示纳米Si晶粒已经形成,随着靶衬间距的增加,所形成的纳米Si晶粒的平均尺寸和面密度分布均呈现先增大后减小的变化趋势,并且二者都在1.3 cm处达到最大值;同时随着外加电压的增大,衬底上纳米Si晶粒消失的位置离靶距离变短.从传榆动力学角度,对实验结果进行了定性分析.
[1] 褚立志, 卢丽芳, 王英龙, 傅广生, CHU Li-zhi, LU Li-fang, WANG Ying-long, FU Guang-sheng. 激光烧蚀制备按尺寸自然分离的纳米Si晶粒 [J]. 中国激光 2007.doi:10.3321/j.issn:0258-7025.2007.04.022
[2] 王英龙, 周阳, 褚立志, 傅广生, 彭英才, WANG Ying-long, Zhou Yang, CHU Li-zhi, Fu Guang-Sheng, PENG Ying-cai. Ar环境气压对脉冲激光烧蚀制备纳米Si晶粒平均尺寸的影响 [J]. 物理学报 2005.doi:10.3321/j.issn:1000-3290.2005.04.038
[3] 褚立志, 卢丽芳, 王英龙, 傅广生, Chu Li-Zhi, Lu Li-Fang, Wang Ying-Long, Fu Guang-Sheng. 脉冲激光烧蚀制备纳米Si晶粒成核区位置的确定 [J]. 物理学报 2007.doi:10.3321/j.issn:1000-3290.2007.06.055
[4] CHENG Buwen, LI Chuan bo, YAO Fei. Silicon membrane resonant-cavity-enhanced photodetector [J]. Applied Physics Letters 2005, 87.
[5] YU Wei, WANG Bao-zhu, LU Wan-Bing, YANG Yan-bin, HAN Li, FU Guang-Sheng. Growth of Nanocrystalline Silicon Films by Helicon Wave Plasma Chemical Vapour Deposition [J]. 2004.
[6] WERWA E, SERAPHIN A A, CHIU L A. Synthesis and processing of silicon nanocrystallites using a pulsed laser ablation supersonic expansion method [J]. Applied Physics Letters 1994, 64.
[7] Wang YL, Xu W, Zhou Y, Chu LZ, Fu GS. Influence of pulse repetition rate on the average size of silicon nanoparticles deposited by laser ablation [J]. Laser and Particle Beams 2007, 1(1).
[8] Wang YL, Deng ZC, Fu GS, Zhou Y, Chu LZ, Peng YC. The average size of Si nanoparticles prepared by pulsed laser ablation in the gas mixture of He/Ar, Ne/Ar or He/Ne [J]. Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films 2006, 4(4).
[9] Fu GS, Wang YL, Chu LZ, Zhou Y, Yu W, Han L, Peng YC. The size distribution of Si nanoparticles prepared by pulsed-laser ablation in pure He, Ar or Ne gas [J]. EPL 2005, 5(5).
[10] Junichi Muramoto, Ippei Sakamoto, Yoshiki Nakata. Influence of electric field on the behavior of Si nanoparticles generated by laser ablation [J]. Applied physics letters 1999, 6(6).
[11] Wang YL, Li YL, Fu GS. Relation between size-distribution of Si nanoparticles and oscillation-stabilization time of the mixed region produced during laser ablation [J]. Nuclear Instruments and Methods in Physics Research, Section B. Beam Interactions with Materials and Atoms 2006, 2(2).
[12] Saeki M, Hirata K, Sakka T, Ohba H, Yokoyama A. Laser ablation of silicon in neon gas: Study of excitation mechanism of neon neutrals by ablated silicon ions - art. no. 044912 [J]. Journal of Applied Physics 2005, 4(4).
