建立3种具有不同相变温度的铁电材料垂直于极化方向复合而成的铁电薄膜的理论模型,在ginzburg-landau-devonshire (GLD)唯象理论的框架下展开研究,同时引入局域分布函数来描述不同材料间过渡层的性质,主要研究了复合铁电薄膜的热释电性质.通过改变3种不同铁电材料的复合方式,计算了铁电多层膜内部的极化强度分布、相变温度及热释电系数.研究表明,具有不同相变温度的铁电材料间的复合方式对铁电薄膜的极化和热释电性质有着重要的影响,3种不同材料复合而成的铁电薄膜随着温度的变化出现了2个热释电峰.新模型下的复合铁电薄膜表现很多新的特性,尤其对于铁电热释电器件性能的改良提出了一种参考,该种复合薄膜也许能够成为通常使用的多层膜的一种选择.
[1] 张旭, 赵庆勋, 李晓红, 刘保亭, ZHANG Xu, ZHAO Qing-xun, LI Xiao-hong, LIU Bao-ting. Ni-Al底电极对偏氟乙烯-三氟乙烯共聚物铁电薄膜性能的影响 [J]. 河北大学学报（自然科学版） 2010.doi:10.3969/j.issn.1000-1565.2010.01.005
[2] 王悦辉, 庄志强. 铁电薄膜材料的研究进展 [J]. 现代技术陶瓷 2002.doi:10.3969/j.issn.1005-1198.2002.04.005
[3] WU Jiagang, ZH U Jiliang, XIAO Dingquan. Double hysteresis loop in (Pb0.90 La0.10) Ti0.975 O3/Pb(Zr0.200 Ti0.80) O3 [J]. Applied Physics Letters 2007, 91.
[4] Wang J, Zhang TY. Influence of depolarization field on polarization states in epitaxial ferroelectric thin films with nonequally biaxial misfit strains [J]. Physical review, B. Condensed matter and materials physics 2008, 1(1).
[5] Es-Souni M., Iakovlev S., Solterbeck CH.. Multilayer ferroelectric thin films for pyroelectric applications [J]. Sensors and Actuators, A. Physical 2003, 1/2(1/2).
[6] J.Huang, R.C.Buchanan. Pyroelectric and sensor properties of ferroelectric thin films for energy conversion [J]. Journal of the European Ceramic Society 1999, 6/7(6/7).
[7] AKAI D, YOKAWA M, YASHI K H. Ferroelectric properties of sol-gel delivered epitaxial Pb(Zrx, Ti1-x)O3 thin films on Si using epitaxial γ-Al2O3 Layers [J]. Applied Physics Letters 2005, 86.
[8] Lingling Sun, Ooi Kiang Tan, Weiguo Liu. Characterization of sol-gel derived Pb(Zr_(0.3)Ti_(0.7))O_3/PbTiO_3 multilayer thin films [J]. Ceramics International 2004, 7(7).
[9] L(U) Tianquan, CAO Wenwu. Gneralized continuum theory for ferroelectric thin films [J]. Physical Review B 2002, 66.
[10] 吴银忠, 李振亚. EFFECTS OF LONG-RANGE INTERACTIONS ON THE FERROELECTRIC FILM [J]. 2001.
