为深入理解纳米硅(Si)晶粒的成核机理,实现纳米Si晶粒的均匀可控, 采用蒙特-卡罗(Monte Carlo)模拟方法, 对脉冲激光烧蚀单晶Si靶沉积纳米Si晶薄膜过程中烧蚀粒子在环境气体中的输运动力学过程进行了模拟,并研究了环境气体种类对烧蚀粒子时空分布的影响. 研究结果表明, 当环境气体种类确定时, 随着时间的推移, 烧蚀粒子强度分布的峰值右移;并且在He环境气体中烧蚀粒子的传播距离最大, 在Ar环境气体中烧蚀粒子传播距离最小;随着距靶的距离增加, 烧蚀粒子的强度减小, 在Ne环境气体中传输的烧蚀粒子出现二次强度峰的时间最早, 并且强度峰值最大.
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