为:Au膜层厚度为5~10 nm,温度为1 100 ℃,N2气流量为1.5 L/min.
[1] Yang Y, Tay BK, Sun XW, Fan HM, Shen ZX. Photoluminescence and growth mechanism of amorphous silica nanowires by vapor phase transport [J]. Physica, E. Low-dimensional systems & nanostructures 2006, 2(2).
[2] N. J. Stone, H. Ahmed. Single-electron detector and counter [J]. Applied physics letters 2000, 5(5).
[3] Jong-in Hahm, Charles M. Lieber. Direct Ultrasensitive Electrical Detection of DNA and DNA Sequence Variations Using Nanowire Nanosensors [J]. Nano letters 2004, 1(1).
[4] O. H. Elibol, D. Morisette, D. Akin, J. P. Denton, R. Bashir. Integrated nanoscale silicon sensors using top-down fabrication [J]. Applied physics letters 2003, 22(22).
[5] TSAKALAKOS L, BALCH J, FRONHEISER J. Silicon nanowire solar cells [J]. Applied Physics Letters 2007, 91.
[6] TIAN Bozhi, ZHENG Xiaolin, KEMPA T J. Coaxial silicon nanowires as solar cells and nanoelectric power source [J]. Nature 2007, 449.
[7] Kwak DW, Cho HY, Yang WC. Dimensional evolution of silicon nanowires synthesized by Au-Si island-catalyzed chemical vapor deposition [J]. Physica, E. Low-dimensional systems & nanostructures 2007, 1/2(1/2).
[8] WONG Y Y, YAHAYA M, SALLEH M M. Controlled growth of silicon nanowires synthesized via solid-liquid-solid mechanism [J]. Science and Technology of Advanced Materials 2006, 6.
[9] WANG Y W, SCHMIDT V, SENZ S. Epitaxial growth of silicon nanowires using an aluminium catalyst [J]. Nature Nenotechnology 2006, 1.
[10] L.Z. Pei, Y.H. Tang, Y.W. Chen, C. Guo, W. Zhang, Y. Zhang. Silicon nanowires grown from silicon monoxide under hydrothermal conditions [J]. Journal of Crystal Growth 2006, 2(2).
[11] Yu DP., Hang QL., Yan HF., Xu J., Xi ZH., Feng SQ., Xing YJ.. Controlled growth of oriented amorphous silicon nanowires via a solid-liquid-solid (SLS) mechanism [J]. Physica, E. Low-dimensional systems & nanostructures 2001, 2(2).