以Au膜作金属催化剂、SiH4作为源气体,基于气-液-固(VLS)生长机制在n-Si(111)单晶衬底上制备出了Si纳米线.利用扫描电子显微镜对样品进行了结构表征,Si纳米线的直径为20～200 nm、长度为数微米到数十微米,X射线能量损失谱分析表明所制备的Si纳米线中含有少量的Au元素.讨论了生长温度、SiH_4流量、Au膜层厚度和生长时间对Si纳米线的形成与结构的影响.
Silicon nanowires were synthesized on n-Si (111) substrates using Au film as catalyst and SiH4 gas as a vapor phase reactant based on vapor-liquid-solid mechanism. The measurement of scanning electron microscopy shows that their diameters mainly range from 20～200 nm and their lengths are from several micrometers to dozens of micrometers. The composition is measured with energy-dispersive X-ray spectrometry. The effects of the growth temperature, SiH_4 flow rate ,thickness of Au film and growth time on the formation and structures of Si nanowires were discussed.
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