采用 XeCl 脉冲准分子激光器,保持激光脉冲比为1:3,分时烧蚀Er靶和高阻抗单晶Si靶,在10 Pa的Ne气环境下沉积了掺Er非晶Si薄膜. 在氮气保护下,分别在1 000℃,1 050 ℃和1 100℃温度下进行30 min热退火处理. 对所得样品的Raman谱测量证实,随着退火温度的升高,薄膜的晶化程度提高;利用扫描电子显微镜观测了所制备的掺Er纳米Si晶薄膜的表面形貌,并与相同实验参数、真空环境下烧蚀并经热退火的结果进行了比较. 结果表明,Ne气的引入,使形成轮廓明显的掺Er纳米Si晶粒的退火温度降低,有利于尺寸均匀的晶粒的形成.
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