根据超支化高分子生长的空间位阻效应,通过利用简单的统计模型分析了ABg型反应体系在临界生长代数时形成缺陷结构的物理过程,进一步给出了临界反应代数与官能团之间的关系,扼要地讨论了超支化高分子的折光指数随生长代数的变化情况.
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