采用螺旋波等离子体增强化学气相沉积(HWP-CVD)技术以SiH4和N2为反应气体沉积了氮化硅(SiN)薄膜,利用傅里叶红外吸收谱(FTIR)、紫外-可见透射谱(UV-VIS)等对薄膜的键合结构、光学带隙等参量进行了测量与分析.结果表明,采用HWP-CVD技术能在较低的衬底温度下制备低H含量的SiN薄膜,所沉积的薄膜主要表现为Si-N键合结构.适当提高N2/SiH4比例将有利于薄膜中H含量的降低.
[1] 杨辉, 丁新更, 孟祥森. APCVD制备氮化硅薄膜的微观结构 [J]. 功能材料 2000.doi:10.3321/j.issn:1001-9731.2000.06.027
[2] Han S S, JUN B H, NO K. Preparation of a-SiNx thin film with low hydrogen content by inductively coupled plasma enhanced chemical vapor deposition [J]. Journal of the Electrochemical Society 1998, 145.
[3] PARK D G, TAO M, Li D. Gate quality Si3N4 prepared by low temperature remote plasma enhanced chemical vapor deposition for Ⅲ-Ⅴ semiconductor-based metal-insulator-semiconductor devices [J]. Journal of Vacuum Science and Technology B 1996, B14.
[4] Fujita S, OHISHI T, TOYOSHIMA H. Electrical properties of silicon nitride films plasma-deposited from SiH4 N2 and H2 source gases [J]. Journal of Applied Physiology 1985, 57(02).
[5] Fujita S, TOYOSHIMA H, OHISHI T. Plasma enhanced chemical vapor deposition of fluorinated silicon nitride [J]. Japanese Journal of Applied Physics 1984, 23(03).
[6] Yamaya K., Nakanishi H., Chichibu S., Yamaki Y.. Use of a helicon-wave excited plasma for aluminum-doped ZnO thin-film sputtering [J]. Applied physics letters 1998, 2(2).
[7] 周海, 吴大兴, 杨川. DC-PVD法快速制备Si3N4薄膜 [J]. 硅酸盐学报 1995, 66(02).
[8] MAITINEZ F L, PRADO DEL A, MATIL I. Thermally induced changes in the optical properties of SiNx:H films deposited by the electron cyclotron resonance plasma method [J]. Journal of Applied Physics 1999, 86(04).
[9] Wei-Tang Li, David R. McKenzie, William D. McFall, Qi-Chu Zhang. Effect of sputtering-gas pressure on properties of silicon nitride films produced by helicon plasma sputtering [J]. Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films 2001, 1(1).
[10] FLEWIT A J, DYSON A P, Robertson J. Low temperature growth of silicon nitride by electron cyclotron resonance plasma enhanced chemical vapor deposition [J]. Thin Solid Films 2001, 383.
