以高纯Sn丝为蒸发源,采用真空热蒸发法在石英衬底上沉积了厚度为205 nm的金属Sn薄膜.随后,在高纯氧氛围中于200~500 ℃条件下进行氧化处理.利用X线衍射仪、拉曼光谱仪、分光光度计和数字源表测量了不同氧化温度下样品的结构、光学、电学特性.结构测量表明,不同氧化温度会产生不同结晶状态的氧化产物,提高氧化温度可得到单一、稳定的四方晶系SnO2.光学测量结果证实,随氧化温度的升高,薄膜样品的光学带隙增大,电流-电压测试表明薄膜电阻率随氧化温度的升高而降低.
Sn thin films with thickness of 205 nm were deposited on quartz substrates surface by vacuum thermal evaporation method using high purity Sn wire as evaporation source.Then,the films were under oxidation treatment in the temperature range of 200~500 °C in high purity oxygen atmosphere.The films were characterized using X-ray diffraction(XRD),Raman spectrometer,spectrophotometer and source meter for their structural,optical and electrical properties respectively.The measure for structural studies reveal that SnO2 of tetragonal system with a single crystal orientation is obtained under the high temperature.The optical measurement shows that thin film optical band gap in creases with oxidation temperature rises.The current–voltage characteristics show that electrical conductivity decrease with increasing oxidation treatment.
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