Ga3+对Mg14Ge5O24:Cr近红外发光材料的影响

徐艳梅; 秦晓东; 梁绍龙; 王嘉瑞; 王雪骄; 王志军

doi:10.3969/j.issn.1000-1565.2023.05.003

河北大学学报(自然科学版) >

2023 , Vol. 43 >Issue 5: 463 - 469

DOI: https://doi.org/10.3969/j.issn.1000-1565.2023.05.003

Ga³⁺对Mg₁₄Ge₅O₂₄:Cr近红外发光材料的影响

徐艳梅 ,
秦晓东 ,
梁绍龙 ,
王嘉瑞 ,
王雪骄 ,
王志军

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徐艳梅(1979—),女,河北廊坊人,华北电力大学副教授,博士,主要从事发光材料及应用方向研究.
E-mail:xuyanmei@ncepu.edu.cn

收稿日期: 2023-01-09

网络出版日期: 2023-10-25

基金资助

国家自然科学基金资助项目(51902080;2018MS133);华北电力大学中央高校基金资助项目(2018MS133)

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Effect of Ga³⁺ on the luminescence property of Mg₁₄Ge₅O₂₄:Cr near infrared material

XU Yanmei ,
QIN Xiaodong ,
LIANG Shaolong ,
WANG Jiarui ,
WANG Xuejiao ,
WANG Zhijun

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1.Department of Mathematics and Physics, North China Electric Power Unversity, Baoding 071003, China; 2.College of Physics Science and Technology, Hebei University, Baoding 071002, China

Received date: 2023-01-09

Online published: 2023-10-25

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摘要

利用高温固相法合成了Mg₁₄Ge₅O₂₄:Cr近红外荧光粉,实现了Cr³⁺和Cr⁴⁺价态共存发光.利用XRD和GASA精修软件分析了样品的晶相.该材料存在2个发光中心,一个来自占据八面体Ge⁴⁺位置的Cr³⁺,发射带位于近红外一区,半峰宽可达256 nm;另一个源于占据四面体Ge⁴⁺位置的Cr⁴⁺,发射带位于近红外二区,半峰宽可达266 nm.通过低温光谱和寿命衰减曲线分析了材料的发光特性.利用Ga³⁺代替Ge⁴⁺可以实现对Cr³⁺和Cr⁴⁺发光的调控,大半径Ga³⁺的加入产生了新的格位,从而影响了整体的晶体场强度,获得了近红外一区发光更强烈的荧光粉.

关键词： 发光; 近红外; Mg₁₄Ge₅O₂₄:Cr; Ga³⁺

本文引用格式

徐艳梅 , 秦晓东 , 梁绍龙 , 王嘉瑞 , 王雪骄 , 王志军 . Ga³⁺对Mg₁₄Ge₅O₂₄:Cr近红外发光材料的影响[J]. 河北大学学报(自然科学版), 2023 , 43(5) : 463 -469 . DOI: 10.3969/j.issn.1000-1565.2023.05.003

Abstract

Mg₁₄Ge₅O₂₄:Cr near-infrared(NIR)phosphors were synthesized by the high-temperature solid-phase method to achieve the coexistence of Cr³⁺ and Cr⁴⁺ valence luminescence. The crystalline phases of the samples were analyzed using XRD and GASA refinement software. The material has two luminescence centers, one from Cr³⁺ occupying the octahedral Ge⁴⁺ position with an emission band in the NIR I region and a half-peak width up to 256 nm, and the other from Cr⁴⁺ occupying the tetrahedral Ge⁴⁺ position with an emission band in the NIR II region and a half-peak width up to 266 nm. The luminescence properties of the material were analyzed by low-temperature spectra and lifetime decay curves. The modulation of Cr³⁺ and Cr⁴⁺ luminescence can be achieved by using Ga³⁺ instead of Ge⁴⁺. The addition of large radius Ga³⁺ ions generates new lattice sites, which affects the overall crystal field intensity, and a phosphor with more intense luminescence in the NIR I region is obtained.

Key words： luminescence; near infrared; Mg₁₄Ge₅O₂₄:Cr; Ga³⁺

参考文献

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