BiCuTeO是近年来新发现的一种P型热电材料.本文利用脉冲激光沉积技术在LaAlO3单晶衬底上制备了c轴10°倾斜的BiCuTeO薄膜,研究了生长温度对薄膜物相和表面形貌的影响,基于横向热电效应测试了其脉冲光探测特性.结果发现:380 ℃生长的薄膜晶体质量最优;在308 nm脉冲激光辐照下,输出电压灵敏度达到9.5 V/mJ、上升时间为68 ns,该灵敏度优于相同晶系的BiCuSeO及横向热电效应研究的许多材料,表明该薄膜在高灵敏、快响应的紫外脉冲光探测领域具有重要的应用潜力.
BiCuTeO has garnered significant attention as a promising P-type thermoelectric material in recent years. In this study, c-axis inclined BiCuTeO thin films were prepared on LaAlO3 single crystal substrates using the pulsed laser deposition technique. The influence of deposition temperature on the crystal structure and surface topography was studied, and the light induced transverse thermoelectric effect of the films was investigated. The film grown at 380 ℃ exhibited superior crystal quality. Upon the irradiation of a 308 nm pulsed laser, voltage signals with a sensitivity of 9.5 V/mJ and a rise time of 68 ns were detected. Importantly, this sensitivity surpasses that of BiCuSeO and several other materials studied in terms of transverse thermoelectric effect, thereby highlighting the substantial potential of this film for high-sensitivity and fast-response pulsed light detection applications.
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