静电放电次数与半导体器件潜在性失效的关系
杨洁,刘尚合,刘红兵,祁树锋
Relationship Between ESD Injected Times and Latent Damage in Semi-conductor Transistors
YANG Jie,LIU Shang-he,LIU Hong-bing,QI Shu-feng
河北大学学报(自然科学版)
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2007, (6): 620
-624
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DOI: 10.3969/j.issn.1000-1565.2007.06.014
