Gain characteristics of InAs/GaAs quantum dot lasers

  • WEI Yuxin ,
  • CHEN Ruili
Expand
  • College of Criminal Science and Technology, People’s Public SecurityUniversity of China, Beijing 100038, China

Received date: 2015-04-17

  Online published: 2016-05-25

Abstract

Due to the atom-like state densities,quantum-dot(QD)lasers have a number of unique optical and electronic properties.In this work,InAs/GaAs quantum dot semiconductor lasers are fabricated,and their mode gain spectra are measured by the Fourier series expansion method and the Hakki-Paoli method.Hakki-Paoli method is found to be influenced by the resolution of the measurement system,leading to underestimated gain.On the other hand, we found that Fourier Series Expansion method with a correction factor derived from the response function of the measurement system can be used to obtain gain spectrum with high accuracy.

Cite this article

WEI Yuxin , CHEN Ruili . Gain characteristics of InAs/GaAs quantum dot lasers[J]. Journal of Hebei University(Natural Science Edition), 2016 , 36(3) : 232 -236 . DOI: 10.3969/j.issn.1000-1565.2016.03.003

References

[1] WU Y C,JIANG L,ASRYAN L V.Output power of a quantum dot laser:Effects of excited states[J].Journal of Applied Physics,2015,118(18):183107.DOI:10.1063/1.4935296.
[2] RANTAMAKI A,SOKOLOVSKII G S,BLOKHIN S A,et al.Quantum dot semiconductor disk laser at 1.3 μm[J].Optics Letters,2015,40(14):3400-3403.DOI:10.1364/ol.40.003400.
[3] KRYZHANOVSKAYA N V,ZHUKOV A E,MAXIMOV M V,et al.Room temperature lasing in 1μm microdisk quantum dot lasers[J].IEEE Journal of Selected Topics in Quantum Electronics,2015,21(6):1900905.DOI:10.1109/jstqe.2015.2439156.
[4] TALEB H,ABEDI K.Optical gain,phase,and refractive index dynamics in photonic crystal quantum-dot semiconductor optical amplifiers[J].IEEE Journal of Quantum Electronics,2014,50(8):605-612.DOI:10.1109/jqe.2014.2329502.
[5] LEDENTSOV N N,SHCHUKIN V A,MAXIMOV M V,et al.High temperature laser diode based on a single sheet of quantum dots[J].Semiconductor Science and Technology,2015,30(10):105005.DOI:10.1088/0268-1242/30/10/105005.
[6] KRYZHANOVSKAYA N V,MOISEEV E I,KUDASHOVA Y V,et al.Continuous-wave lasing at 100 degrees C in 1.3 μm quantum dot microdisk diode laser[J].Electronics Letters,2015,51(17):1354-1355.DOI:10.1049/el.2015.2325.
[7] SILVERMAN K L,MIAJA-AVILA L,VERMA V B,et al.Gain and Loss in Active Waveguides Based on Lithographically Defined Quantum Dots[J].IEEE Photonics Technology Letters,2014,26(13):1283-1286.DOI:10.1109/lpt.2014.2321140.
[8] HAKKI B W,PAOLI T L.Gain spectra in GaAs double-heterostructure injection lasers[J].Journal of Applied Physics,1975,46(3): 1299-1306.DOI:10.1063/1.321696.
[9] CASSIDY D T.Technique for measurement of the gain spectra of semiconductor diode lasers[J].Journal of Applied Physics,1984,56(11):3096-3099.DOI:10.1063/1.333867.
[10] HOFSTETTER D,FAIST J.Measurement of semiconductor laser gain and dispersion curves utilizing Fourier transforms of the emission spectra[J].IEEE Photonics Technology Letters,1999,11(11): 1372-1374.DOI:10.1109/68.803049.
[11] GUO W H,LU Q Y,HUANG Y Z,et al.Fourier series expansion method for gain measurement from amplified spontaneous emission spectra of Fabry-Pérot semiconductor lasers[J].IEEE Journal of Quantum Electronics,2004,40(2):123-129.DOI:10.1109/JQE.2003.821535.
[12] KITA T,SUWA M,KAIZU T,et al.Polarization-insensitive optical gain characteristics of highly stacked InAs/GaAs quantum dots[J].Journal of Applied Physics,2014,115(23):233512.DOI:10.1063/1.4884228.
[13] LIU C Y,WANG H,MENG Q Q,et al.Modal gain and photoluminescence investigation of two-state lasing in GaAs-based 1.3 μm InAs/InGaAs quantum dot lasers[J].Applied Physics Express,2013,6(10):102702.DOI:10.7567/apex.6.102702.
[14] CHEN S M,ZHOU K J,ZHANG Z Y,et al.Hybrid quantum well/quantum dot structure for broad spectral bandwidth emitters[J].IEEE Journal of Selected Topics in Quantum Electronics,2013,19(4):1900209.DOI:10.1109/jstqe.2012.2235175.
Outlines

/

〈 〉