DING Wen-ge , LI Wen-bo , YUAN Jing , YU Wei , FU Guang-sheng . Performance Optimization of Tunnel Junction in Tandem Solar Cells[J]. Journal of Hebei University(Natural Science Edition), 2011 , 31(4) : 356 -361 . DOI: 10.3969/j.issn.1000-1565.2011.04.005

[1] 方祖捷, 陈高庭, 叶青, 瞿荣辉, Fang Zu-jie, Chen Gao-ting, Ye Qing, Qu Rong-hui. 太阳能发电技术的研究进展 [J]. 中国激光 2009.doi:10.3788/CJL20093601.0005
[2] 朱诚, 张永刚, 李爱珍. 隧道结在多结太阳电池中的应用 [J]. 稀有金属 2004.doi:10.3969/j.issn.0258-7076.2004.03.021
[3] 黄子乾, 李肖, 潘彬, 张岚, Huang Ziqian, Li Xiao, Pan Bin, Zhang Lan. 用于GaInP/GaAs双结叠层太阳电池的MOVPE外延材料 [J]. 太阳能学报 2006.doi:10.3321/j.issn:0254-0096.2006.05.004
[4] 李宝霞, 汪韬, 李晓婷, 赛小锋, 高鸿楷. MOCVD生长GaAs高质量掺碳研究 [J]. 光子学报 2003.
[5] 李辉, 汪韬, 李宝霞, 赛晓峰, 高鸿楷. GaInP2/GaAs/Ge叠层太阳电池材料的低压MOCVD外延生长 [J]. 光子学报 2002.
[6] 周勋, 罗木昌, 赵红, 周勇, 刘万清, 邹泽亚, ZHOU Xun, LUO Mu-chang, ZHAO Hong, ZHOU Yong, LIU Wan-qing, ZOU Ze-ya. GaAs基Ⅲ-Ⅴ族多结太阳电池技术研究进展 [J]. 半导体光电 2009.
[7] TAKAHASHI K, YAMADA S, UNNO T. High-efficiency AIGaAs/GaAs tandem solar cells [EB/OL]. http://www.hitachi-cable.com/about/publish/review/_icsFiles/afieldfile/2005/11/28/review07.pdf 2010.
[8] OLSON J M, AHRENKIEL R K, DUNLAVY D J. Ultralow recombination velocity at Ga0.5 In0.5P/GaAs hetero interfaces [J]. Applied Physics Letters 1989, 55.
[9] BERTNESS K A, KURTZ S R, FRIEDMAN D J. 29.5％-efficient GalnP/GaAs tandem solar cells [J]. Applied Physics Letters 1994, 65.
[10] Pendry J.B., Robbins D.J., Stewart W.J., Holden A.J.. Magnetism from conductors and enhanced nonlinear phenomena [J]. IEEE Transactions on Microwave Theory and Techniques 1999, 11(11).
[11] SHELLBY R A, SMITH D R, SCHULTZ S. Experimental verification of a negative index of refraction [J]. Science 2001, 292.
[12] Smith DR., Kroll N.. Negative refractive index in left-handed materials [J]. Physical review letters 2000, 14(14).
[13] Gotoh S., Kakinuma H., Akiyama M., Ueda T.. Thermal stability of GaAs tunnel junctions using carbon as a p-type dopant grown by metal-organic vapor phase epitaxy [J]. Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion 1998, 1/4(1/4).
[14] KARLOVSKY J. Simple method for calculating the tunneling current of an Esaki diode [J]. Physical Review 1962, 127.
[15] SUGIURA H, AMANO C. Double heterostrure GaAs tunnel junction for a AIGaAs / GaAs tandem cell [J]. Japanese Journal of Applied Physics 1998, 27.
[16] Takamoto Tatsuya, Yumaguchi Masafumi, Ikeda Eiji, Agui Takaaki, Kurita Hiroshi, Al-Jassim Mowafak. Mechanism of Zn and Si diffusion from a highly doped tunnel junction for InGaP/GaAs tandem solar cells [J]. Journal of Applied Physics 1999, 3(3).
[17] Khan A, Yamaguchi M, Takamoto T. Performance of single-junction and dual-junction InGaP/GaAs solar cells under low concentration ratios [J]. Applied physics letters 2004, 15(15).
[18] DRISCOLL D C, HANSON M, KADOW C. Electronic structure and conduction in a metal-semiconductor digital composite [J]. Applied Physics Letters 2001, 78.
[19] David G. Cahill, Wayne K. Ford, Kenneth E. Goodson, Gerald D. Mahan, Arun Majumdar, Humphrey J. Maris, Roberto Merlin, Simon R. Phillpot. Nanoscale thermal transport [J]. Journal of Applied Physics 2003, 2(2).
[20] Zide JM, Klenov DO, Stemmer S, Gossard AC, Zeng G, Bowers JE, Vashaee D, Shakouri A. Thermoelectric power factor in semiconductors with buried epitaxial semimetallic nanoparticles [J]. Applied physics letters 2005, 11(11).
[21] KADOW C, FLEISCHER S B, IBBETSON J P. Self-assembled ErAs islands in GaAs:Growth and subpicosecond carrier dynamics [J]. Applied Physics Letters 1999, 75.
[22] ZIDE J M O, KLEIMAN-SHWARSCTEIN A, STRANDWITZ N C. Increased efficiency in multijunction solar cells through the incorporation of semimetallic ErAs nanoparticles into the tunnel junction [J]. Applied Physics Letters 2006, 88.