Ni-Al films with different thicknesses used as the bottom electrode layers are prepared on Si(100) at room temperature by magnetron sputtering method, and P(VDF-TrFE) copolymer film is prepared by direct dripping method, which is followed by an annealing process to further obtain Al/ P(VDF-TrFE)/Ni-Al/Si ferroelectric capacitor heterostructures through a shadow mask. Various techniques, such as X-ray diffraction (XRD), ferroelectric tester (Precision LC unit) have been employed to characterize the microstructure and ferroelectric properties of the ferroelectric capacitors. It is found that thickness of Ni-Al film have a large effect on leakage current of P(VDF-TrFE) copolymer film. When the thickness of Ni-Al film is 36 nm, leakage current density of P(VDF-TrFE) copolymer film is 2.09×10~(-5) A/cm~2. Leakage current mechanism of the Al/ P(VDF-TrFE)/Ni-Al/Si ferroelectric capacitor is further investigated, it is found that Al/ P(VDF-TrFE)/Ni-Al/Si corresponds to Ohmic conduction behavior at low electric field and Schottky emission at higher electric field.
ZHANG Xu
,
ZHAO Qing-xun
,
LI Xiao-hong
,
LIU Bao-ting
. Effect of Ni-Al Bottom Electrode on Ferroelectric Properties of Poly Vinylidene Fluoride with Trifluoroethylene Copolymer Films[J]. Journal of Hebei University(Natural Science Edition), 2010
, 30(1)
: 19
-22
.
DOI: 10.3969/j.issn.1000-1565.2010.01.005
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