The photoluminescence enhancement of CH3NH3PbI3 film and its effect on carrier recombination dynamics were studied by using photoluminescence spectroscopy.Experimental results demonstrate that the rate of photoluminescence enhancement is higher when the power density of light soaking increases.And oxygen atmosphere is helpful to photoluminescence enhancement of CH3NH3PbI3 film.The reduction of defect density in the film is the main mechanism responsible for the photoluminescence enhancement.Furthermore,the effect of light soaking on the recombination dynamics of free carriers and shallow trapped carriers was analyzed by microwave absorption dielectric spectroscopy. Densities of free carriers and shallow trapped carriers in CH3NH3PbI3 film show an obvious increase after the light soaking.
DANG Wei
,
LIU Xu
,
BAI Jingjing
,
ZHAO Jinjin
,
ZHANG Lianshui
. Photoluminescence enhancement effect of CH3NH3PbI3 film[J]. Journal of Hebei University(Natural Science Edition), 2016
, 36(5)
: 462
-467
.
DOI: 10.3969/j.issn.1000-1565.2016.05.003
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