Mg14Ge5O24:Cr near-infrared(NIR)phosphors were synthesized by the high-temperature solid-phase method to achieve the coexistence of Cr3+ and Cr4+ valence luminescence. The crystalline phases of the samples were analyzed using XRD and GASA refinement software. The material has two luminescence centers, one from Cr3+ occupying the octahedral Ge4+ position with an emission band in the NIR I region and a half-peak width up to 256 nm, and the other from Cr4+ occupying the tetrahedral Ge4+ position with an emission band in the NIR II region and a half-peak width up to 266 nm. The luminescence properties of the material were analyzed by low-temperature spectra and lifetime decay curves. The modulation of Cr3+ and Cr4+ luminescence can be achieved by using Ga3+ instead of Ge4+. The addition of large radius Ga3+ ions generates new lattice sites, which affects the overall crystal field intensity, and a phosphor with more intense luminescence in the NIR I region is obtained.
XU Yanmei
,
QIN Xiaodong
,
LIANG Shaolong
,
WANG Jiarui
,
WANG Xuejiao
,
WANG Zhijun
. Effect of Ga3+ on the luminescence property of Mg14Ge5O24:Cr near infrared material[J]. Journal of Hebei University(Natural Science Edition), 2023
, 43(5)
: 463
-469
.
DOI: 10.3969/j.issn.1000-1565.2023.05.003
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