Ni-Al底电极对偏氟乙烯-三氟乙烯共聚物铁电薄膜性能的影响

doi:10.3969/j.issn.1000-1565.2010.01.005

河北大学学报(自然科学版) ›› 2010, Vol. 30 ›› Issue (1): 19-22.DOI: 10.3969/j.issn.1000-1565.2010.01.005

Ni-Al底电极对偏氟乙烯-三氟乙烯共聚物铁电薄膜性能的影响

张旭,赵庆勋,李晓红,刘保亭

河北大学,物理科学与技术学院,河北,保定,071002

出版日期:2010-01-25 发布日期:2010-01-25
基金资助:
河北省自然科学基金

Effect of Ni-Al Bottom Electrode on Ferroelectric Properties of Poly Vinylidene Fluoride with Trifluoroethylene Copolymer Films

ZHANG Xu,ZHAO Qing-xun,LI Xiao-hong,LIU Bao-ting

Online:2010-01-25 Published:2010-01-25

摘要/Abstract

摘要： 利用磁控溅射法,在Si(100)衬底上制备了不同厚度的非晶导电薄膜Ni-Al底电极,并采用直滴法、退火工艺和掩膜技术,首先制备了偏氟乙烯-三氟乙烯P(VDF-TrFE)共聚物铁电薄膜,并构架了Al/ P(VDF-TrFE)/Ni-Al/Si铁电电容器异质结.采用X线衍射仪(XRD)、铁电测试仪(Precision LC unit)等测试手段对薄膜的性能进行了表征.结果表明:Ni-Al薄膜厚度对偏氟乙烯-三氟乙烯共聚物薄膜的漏电流产生较大影响,当厚度为36 nm时,其漏电流密度达到2.09×10~(-5) A/cm~2;所构架的Al/ P(VDF-TrFE) /Ni-Al /Si电容器呈现2种漏电机理,在较低的电场范围内,电容器的导电机理为欧姆导电机理,在高电场下为界面肖特基导电机理.

关键词: 偏氟乙烯-三氟乙烯, 漏电流, Ni-Al

Abstract: Ni-Al films with different thicknesses used as the bottom electrode layers are prepared on Si(100) at room temperature by magnetron sputtering method, and P(VDF-TrFE) copolymer film is prepared by direct dripping method, which is followed by an annealing process to further obtain Al/ P(VDF-TrFE)/Ni-Al/Si ferroelectric capacitor heterostructures through a shadow mask. Various techniques, such as X-ray diffraction (XRD), ferroelectric tester (Precision LC unit) have been employed to characterize the microstructure and ferroelectric properties of the ferroelectric capacitors. It is found that thickness of Ni-Al film have a large effect on leakage current of P(VDF-TrFE) copolymer film. When the thickness of Ni-Al film is 36 nm, leakage current density of P(VDF-TrFE) copolymer film is 2.09×10~(-5) A/cm~2. Leakage current mechanism of the Al/ P(VDF-TrFE)/Ni-Al/Si ferroelectric capacitor is further investigated, it is found that Al/ P(VDF-TrFE)/Ni-Al/Si corresponds to Ohmic conduction behavior at low electric field and Schottky emission at higher electric field.

Key words: P(VDF-TrFE), leakage current, Ni-Al

中图分类号:

O484

张旭,赵庆勋,李晓红,刘保亭. Ni-Al底电极对偏氟乙烯-三氟乙烯共聚物铁电薄膜性能的影响[J]. 河北大学学报(自然科学版), 2010, 30(1): 19-22.

ZHANG Xu,ZHAO Qing-xun,LI Xiao-hong,LIU Bao-ting. Effect of Ni-Al Bottom Electrode on Ferroelectric Properties of Poly Vinylidene Fluoride with Trifluoroethylene Copolymer Films[J]. Journal of Hebei University (Natural Science Edition), 2010, 30(1): 19-22.

参考文献

[1] TAMURA M, OGASAWARA K, ONO N. Piezo-electricity in uniaxially stretched polyvinylidene fluoride [J]. Journal of Applied Physics 1974, 45(09).
[2] 夏钟福. 驻极体 [M]. 北京:科学出版社 2001.
[3] FURKAWA T. Ferroelectric properties of vinylidene fluoride copolymers [J]. Phase Transitions 1989, 18(03).
[4] Zhang QM., Kim CH., Ting R., Capps R., Su J.. AN EXPERIMENTAL INVESTIGATION OF ELECTROMECHANICAL RESPONSES IN A POLYURETHANE ELASTOMER [J]. Journal of Applied Physics 1997, 6(6).
[5] VALASEK J. Piezo-electric and allied phenomena in Rochelle salt [J]. Physical Review 1921, 17(04).
[6] SOLOMON A L. Thiourea, a new ferroelectric [J]. Physical Review 1956, 104(04).
[7] GOLDSMITH G J, WHITE J G. Ferroelectric behavior of thiourea [J]. Journal of Chemical Physics 1959, 31(10).
[8] BORDEAUX D, BORNAREL J, CAPIOMONT A. New ferroelastic-ferroelectric compound:tanane [J]. Physical Review Letters 1973, 31(05).
[9] ESSAYAN S, SCHEINBEIM J I, NEWMAN B A. Pyroelectricity in Nylon 7 and Nylon 11 ferroelectric polymers [J]. Applied Physics Letters 1995, 67(05).
[10] ZOU D, IWASAKI S, TSUTSUI T. Anomaly in dielectric relaxation in alternating copolymers of vinilidene cyanide and fatty acid vinyl ester [J]. Polymer 1990, 31(10).
[11] Haisheng Xu, Xiaobing Liu, Xuerang Fang, Haifen Xie, Guobing Li, Xiangjian Meng, Jinglan Sun, Junhao Chu. Domain stabilization effect of interlayer on ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer ultrathin film [J]. Journal of Applied Physics 2009, 3(3).
[12] Xu HS, Zhong JH, Liu XB, Chen JH, Shen D. Ferroelectric and switching behavior of poly(vinylidene fluoride-trifluoroethylene) copolymer ultrathin films with polypyrrole interface [J]. Applied physics letters 2007, 9(9).
[13] B. T. Liu, C. S. Cheng, F. Li, L. Ma, Q. X. Zhao, Z. Yan, D. Q. Wu, C. R. Li, Y. Wang, X. H. Li, X. Y. Zhang. Ni-Al diffusion barrier layer for integrating ferroelectric capacitors on Si [J]. Applied physics letters 2006, 25(25).

Ni-Al底电极对偏氟乙烯-三氟乙烯共聚物铁电薄膜性能的影响

Effect of Ni-Al Bottom Electrode on Ferroelectric Properties of Poly Vinylidene Fluoride with Trifluoroethylene Copolymer Films

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