Si纳米线的气-液-固生长与结构表征

doi:10.3969/j.issn.1000-1565.2009.06.007

河北大学学报(自然科学版) ›› 2009, Vol. 29 ›› Issue (6): 582-586.DOI: 10.3969/j.issn.1000-1565.2009.06.007

Si纳米线的气-液-固生长与结构表征

白振华,范志东,程旭,彭英才

河北大学,电子信息工程学院,河北,保定,071002

出版日期:2009-11-25 发布日期:2009-11-25
基金资助:
河北省自然科学基金

Growth of Silicon Nanowires via Vapor-Liquid-Solid Mechanism and Its Structural Characteristics

BAI Zhen-hua,FAN Zhi-dong,CHENG Xu,PENG Ying-cai

Online:2009-11-25 Published:2009-11-25

摘要/Abstract

摘要： 以Au膜作金属催化剂、SiH4作为源气体,基于气-液-固(VLS)生长机制在n-Si(111)单晶衬底上制备出了Si纳米线.利用扫描电子显微镜对样品进行了结构表征,Si纳米线的直径为20～200 nm、长度为数微米到数十微米,X射线能量损失谱分析表明所制备的Si纳米线中含有少量的Au元素.讨论了生长温度、SiH_4流量、Au膜层厚度和生长时间对Si纳米线的形成与结构的影响.

关键词: Si纳米线, Au催化, 气-液-固生长, 结构表征

Abstract: Silicon nanowires were synthesized on n-Si (111) substrates using Au film as catalyst and SiH4 gas as a vapor phase reactant based on vapor-liquid-solid mechanism. The measurement of scanning electron microscopy shows that their diameters mainly range from 20～200 nm and their lengths are from several micrometers to dozens of micrometers. The composition is measured with energy-dispersive X-ray spectrometry. The effects of the growth temperature, SiH_4 flow rate ,thickness of Au film and growth time on the formation and structures of Si nanowires were discussed.

Key words: silicon nanowires, Au catalyst, vapor-liquid-solid growth, structural characterization

中图分类号:

TB383

白振华,范志东,程旭,彭英才. Si纳米线的气-液-固生长与结构表征[J]. 河北大学学报(自然科学版), 2009, 29(6): 582-586.

BAI Zhen-hua,FAN Zhi-dong,CHENG Xu,PENG Ying-cai. Growth of Silicon Nanowires via Vapor-Liquid-Solid Mechanism and Its Structural Characteristics[J]. Journal of Hebei University (Natural Science Edition), 2009, 29(6): 582-586.

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Si纳米线的气-液-固生长与结构表征

Growth of Silicon Nanowires via Vapor-Liquid-Solid Mechanism and Its Structural Characteristics

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