[1] MARKOVIC D,WANG C C,ALARCON L P,et al.Ultralow-power design in near-threshold region [J].Proceedings of the IEEE,2010,98(2):237-252.DOI:10.1109/JPROC.2009.2035453. [2] PAUL B C,AGARWAL A,ROY K.Low-power design techniques for scaled technologies [J].Integration,the VLSI Journal,2006,39(2):64-89.DOI:10.1016/j.vlsi.2005.12.001. [3] MOON Y,JEONG D K.An efficient charge recovery logic circuit[J].IEEE Journal of Solid-state Circuits,1996,31(4):514-522. [4] 郭宝增,张亚朋.基于改进型ECRL电路的触发器设计[J].微型机与应用,2010(2):23-26. GUO Baozeng,ZHANG Yapeng.Improved ECRL-based flip-flop design[J].Microcomputer & Its Applications,2010(2):23-26. [5] 张丽,郭宝增.基于ECRL电路的两种改进绝热电路[J].微型机与应用,2011,30(16):19-21. ZHANG Li,GUO Baozeng.Two improved adiabatic circuits based on ECRL[J].Microcomputer & Its Applications,2011,30(16):19-21. [6] SHI J Y,LI H Y,XU Y B.Design of the approved low power energy recovery logic circuit[J].Advanced Materials Research,2013,662:851-855.DOI:10.4028/www.scientific.net/AMR.662.851. [7] YEO Y C,LU Qiang.Direct tunneling gate leakage current in transistors with ultrathin silicon nitride gate dielectric[J].IEEE Electron Device Letters,2000,21(11):540-542.DOI:10.1109/55.877204. [8] HU Jianping,LIU Binbin.Designs of 2P-2P 2N energy recovery logic circuits [J].Research Journal of Applied Sciences,Engineering and Technology,2013,5(21):4977-4982. [9] Nanoscale Integration and Modeling Gralp at ASU Predictive Technology Model(PTM)[S/OL].(2001-5-31)[2014-6-20].http://www.ptm.asu.edu. [10] INUKAI T,TAKAMIYA M,NOSE K,et al.Boosted gate MOS(BGMOS):leakage-free circuits by device/circuit cooperation scheme[J].Integrated Circuits and Devices,2000,100(270):1-8. [11] GHANI T,MISTRY K,PACKAN S,et al.Scaling challenges and device design requirements for high performance sub-50nm gate length planar CMOS transistors[Z].Symposium on VLSI Technology,Hawaii:2000. |