nc-Si:H薄膜的微结构特征与光学特性

摘要/Abstract

摘要： 利用射频等离子体增强型化学气相沉积(RF-PECVD)工艺,以SiH4和H2作为反应气体源,在玻璃和石英衬底上制备了氢化纳米晶硅(nc-Si:H)薄膜.采用Raman散射谱、原子力显微镜(AFM)、透射光谱方法对在不同衬底温度与不同H2稀释比条件下沉积生长薄膜的微结构和光学特性进行了实验研究.结果表明,nc-Si:H薄膜的晶粒尺寸为2.6～7.0 nm和晶化率为45％～48％.在一定反应压强、衬底温度和射频功率下,随着H2稀释比的增加,薄膜的沉积速率降低,但晶化率和晶粒尺寸均有所增加,相应光学吸收系数增大.而在一定反应压强、射频功率和H2稀释比下,随着衬底温度的增加,沉积速率增加,薄膜晶化率提高.

关键词: RF-PECVD, nc-Si:H薄膜, 微结构, 光学特性

中图分类号:

O484

娄建忠,李钗,马蕾,王峰,江子荣. nc-Si:H薄膜的微结构特征与光学特性[J]. 河北大学学报(自然科学版), 2012, 32(6): 592-596.

LOU Jianzhong,LI Chai,MA Lei,WANG Feng,JIANG Zirong. Microstructural characteristics and optical properties of nc-Si:H thin films[J]. Journal of Hebei University (Natural Science Edition), 2012, 32(6): 592-596.

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