河北大学学报(自然科学版) ›› 2016, Vol. 36 ›› Issue (5): 462-467.DOI: 10.3969/j.issn.1000-1565.2016.05.003

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CH3NH3PbI3薄膜的光致发光增强效应

党伟1,刘旭1,白晶晶1,赵晋津2,张连水1   

  • 收稿日期:2016-04-10 出版日期:2016-09-25 发布日期:2016-09-25
  • 通讯作者: 张连水(1956—),男,河北保定人,河北大学研究员,主要从事激光光谱方面的研究.E-mail:zhangls@hbu.edu.cn
  • 作者简介:党伟(1981—),男,河北唐山人,河北大学讲师,主要从事有机、无机半导体载流子动力学的研究. E-mail:dangwei@hbu.edu.cn
  • 基金资助:
    国家自然科学基金资助项目(21503066);高等学校科学技术研究项目(ZC2016003);保定市科学技术研究与发展指导计划项目(15ZG029);河北大学博士后项目(137161);河北大学引进人才项目(2014-283)

Photoluminescence enhancement effect of CH3NH3PbI3 film

DANG Wei1,LIU Xu1,BAI Jingjing1,ZHAO Jinjin2,ZHANG Lianshui1   

  1. 1.Key Laboratory of Hebei Province Optic-electronic Information Materials, College of PhysicsScience and Technology, Hebei University, Baoding 071002, China; 2.College of Materials Science andEngineering, Shijiazhuang Tiedao University, Shijiazhuang 050043, China
  • Received:2016-04-10 Online:2016-09-25 Published:2016-09-25

摘要: 采用光谱测量技术分析了CH3NH3PbI3薄膜的光致发光增强效应及其对载流子复合动力学的影响.实验结果表明,增加光浴功率密度有助于提高薄膜的光致发光增强速率,O2环境有利于薄膜的光致发光增强.CH3NH3PbI3薄膜光浴处理引入的光致发光增强效应源于薄膜内缺陷态浓度降低.同时利用微波吸收介电谱技术,表征了CH3NH3PbI3薄膜光浴前后,自由载流子和浅能级束缚载流子的复合动力学.发现光浴后,薄膜的自由载流子和浅能级束缚载流子浓度明显提高.

关键词: CH3NH3PbI3, 光致发光增强, 缺陷, 载流子复合动力学

Abstract: The photoluminescence enhancement of CH3NH3PbI3 film and its effect on carrier recombination dynamics were studied by using photoluminescence spectroscopy.Experimental results demonstrate that the rate of photoluminescence enhancement is higher when the power density of light soaking increases.And oxygen atmosphere is helpful to photoluminescence enhancement of CH3NH3PbI3 film.The reduction of defect density in the film is the main mechanism responsible for the photoluminescence enhancement.Furthermore,the effect of light soaking on the recombination dynamics of free carriers and shallow trapped carriers was analyzed by microwave absorption dielectric spectroscopy. Densities of free carriers and shallow trapped carriers in CH3NH3PbI3 film show an obvious increase after the light soaking.

Key words: CH3NH3PbI3, photoluminescence enhancement, defect, carrier recombination dynamics

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