关键词: 硅衬底, 掺杂, 变温, 荧光光谱

Abstract: Phosphorus-doped and boron-doped silicon wafers were obtained by in-situ doping on Si(110)substrates. In this paper, the fluorescence spectra of intrinsic, phosphorus-doped and boron-doped silicon wafers were measured. The effects of impurities on the properties of silicon wafers at different temperatures were investigated. There is only one characteristic peak in the fluorescence emission spectrum of the intrinsic silicon wafer. After doping, the impurity peak is on the left side of the main peak due to the splitting of the energy level. In both doping cases, the wavelength of the impurity peak increases with increasing temperature, while the wavelength of the main peak decreases with increasing temperature. As the temperature rises to 135 K, the impurity peaks disappear and gradually merge into the main peak, and - DOI:10.3969/j.issn.1000-1565.2018.04.004硼掺杂和磷掺杂对硅衬底的变温荧光光谱特性的影响王龙龙¹,周文广¹,张连水¹,李晓莉^1,2, 周川¹, 史亚芳¹(1.河北大学 物理科学与技术学院,河北省光电信息材料重点实验室,河北 保定 071002;2.中国科学院 半导体研究所,半导体超晶格国家重点实验室,北京 100038)摘 要:在Si(110)衬底上通过原位掺杂的方法可得到磷掺杂和硼掺杂硅片.测量了本征、磷掺杂和硼掺杂硅片的变温荧光光谱,研究了不同温度时杂质对硅片性质的影响.本征硅片的荧光发射光谱中只存在1个特征峰,进行掺杂后,由于能级发生分裂,在主峰左侧分裂出杂质峰.2种情况下均表现为杂质峰的波长随温度升高逐渐增加,而主峰的波长随温度升高逐渐减小.随着温度升高到135 K,杂质峰消失并逐渐并入到主峰中,而且它们的主峰波长在275 K时都与本征硅片的特征峰波长趋于一致.关键词:硅衬底;掺杂;变温;荧光光谱中图分类号: O562.3⁺2 文献标志码:A 文章编号:1000-1565(2018)04-0362-06Effect of boron doping and phosphorus doping on temperature-dependent fluorescence spectra of silicon substrateWANG Longlong¹, ZHOU Wenguang¹, ZHANG Lianshui¹, LI Xiaoli^1,2, ZHOU Chuan¹, SHI Yafang¹(1.College of Physics Science and Technology, Hebei University, Baoding 071002, China;2.State Key Laboratory of Semiconductor Superlattices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100038, China )Abstract: Phosphorus-doped and boron-doped silicon wafers were obtained by in-situ doping on Si(110)substrates. In this paper, the fluorescence spectra of intrinsic, phosphorus-doped and boron-doped silicon wafers were measured. The effects of impurities on the properties of silicon wafers at different temperatures were investigated. There is only one characteristic peak in the fluorescence emission spectrum of the intrinsic silicon wafer. After doping, the impurity peak is on the left side of the main peak due to the splitting of the energy level. In both doping cases, the wavelength of the impurity peak increases with increasing temperature, while the wavelength of the main peak decreases with increasing temperature. As the temperature rises to 135 K, the impurity peaks disappear and gradually merge into the main peak, and - 收稿日期:2017-12-01 基金项目:国家自然科学基金青年科学基金资助项目(11504077);河北省自然科学基金青年科学基金资助项目(A2017201012);河北省教育厅自然科学重点资助项目(ZD2017007) 第一作者:王龙龙(1994—),男,陕西延安人,河北大学在读硕士研究生.E-mail:3361289613@qq.com 通信作者:李晓莉(1982—),女,河北南宫人,河北大学副教授,博士,主要从事半导体光学方面研究.E-mail: xiaolixiaoli1999@126.com第4期王龙龙等:硼掺杂和磷掺杂对硅衬底的变温荧光光谱特性的影响the main peak wavelength in both doping cases coincides with the characteristic peak wavelength of the intrinsic wafer at 275 K.

Key words: silicon substrate, doping, temperature change, fluorescence spectroscopy