[1] YANG Y H, SU Y F, CHIANG K N. Acceleration factor analysis of aging test on gallium nitride(GaN)-based high power light-emitting diode(LED)[C] //Fourteenth Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems(ITherm), May 27-30, 2014, Orlando, FL, USA, IEEE, 2014: 178-181. DOI: 10.1109/ITHERM.2014.6892278. [2] 何况.LED寿命预测技术[D].杭州: 杭州电子科技大学, 2011. [3] 王亚盛,张丽燕,刁生进.大功率LED加速寿命试验及问题分析[J].半导体技术, 2009, 34(10): 986-990. DOI: 10.3969/j.issn.1003-353x.2009.10.013. [4] CHANG M H, DAS D, VARDE P V, et al. Light emitting diodes reliability review[J]. Microelectron Reliab, 2012, 52(5): 762-782. DOI: 10.1016/j.microrel.2011.07.063. [5] MENEGHINI M, TAZZOLI A, MURA G, et al. A review on the physical mechanisms that limit the reliability of GaN-based LEDs [J]. IEEE Trans Electron Devices, 2010, 57(1): 108-118. DOI: 10.1109/TED.2009.2033649. [6] 高兆丰,曹耀龙,高金环,等.照明用功率LED的加速寿命试验[J].半导体光电, 2009, 30(4): 534-535, 540. DOI: 10.16818/j.issn1001-5868.2009.04.014. [7] ISHIZAKI S, KIMURA H, SUGIMOTO M. Lifetime estimation of high power white LEDs [J]. J Light Vis Environ, 2007, 31(1): 11-18. DOI: 10.2150/jlve.31.11. [8] TREVISANELLO L, DE ZUANI F, MENEGHINI M, et al. Thermally activated degradation and package instabilities of low flux LEDS[C] //2009 IEEE International Reliability Physics Symposium, April 26-30, 2009, Montreal, QC, Canada, IEEE, 2009: 98-103. DOI: 10.1109/IRPS.2009.5173231. [9] MENEGHINI M, TREVISANELLO L, SANNA C, et al. High temperature electro-optical degradation of InGaN/GaN HBLEDs[J]. Microelectron Reliab, 2007, 47(9/10/11): 1625-1629. DOI: 10.1016/j.microrel.2007.07.081. [10] POLYAKOV A Y, SMIRNOV N B, GOVORKOV A V, et al. Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing[J]. J Appl Phys, 2002, 91(8): 5203-5207. DOI: 10.1063/1.1465119. [11] 郭春生,谢雪松,马卫东,等.快速评价半导体器件失效激活能的方法[J].半导体技术, 2006, 31(2): 122-126. DOI: 10.13290/j.cnki.bdtjs.2006.02.013. [12] LU G J, YUAN C, FAN X J, et al. Correlation of activation energy between LEDs and luminaires in the lumen depreciation test[C] //2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems(EuroSimE), April 7-9, 2014, Ghent, Belgium, IEEE, 2014: 1-3. DOI: 10.1109/EuroSimE.2014.6813827. [13] 莫郁薇.热应力对半导体分立器件失效率的影响[J].电子产品可靠性与环境试验, 1996, 14(5): 25-31. [14] 王兵.白光LED老化寿命试验分析研究[J].中小企业管理与科技, 2011(22): 324 - 325. [15] VÁZQUEZ M, NU'ÑEZ N, NOGUEIRA E, et al. Degradation of AlInGaP red LEDs under drive current and temperature accelerated life tests[J]. Microelectron Reliab, 2010, 50(9/10/11): 1559-1562. DOI: 10.1016/j.microrel.2010.07.057. [16] NOGUEIRA E, VÁZQUEZ M, NU'ÑEZ N. Evaluation of AlGaInP LEDs reliability based on accelerated tests [J]. Microelectron Reliab, 2009, 49(9/10/11): 1240-1243. DOI: 10.1016/j.microrel.2009.06.031. [17] 魏娇.LED照明产品寿命快速评价方法的研究[D].西安: 西北大学, 2014: 23. [18] ZHANG R X, ZHANG C Z, LIU D Y, et al. Lifetime evaluation methods for LED products[C] //2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems(EuroSimE), April 18-20, 2016, Montpellier, France, IEEE, 2016: 1-5. DOI: 10.1109/EuroSimE.2016.7463319. [19] 余小龙.大功率LED的电热特性及其对阵列光源光衰的影响研究[D].北京:北京交通大学, 2019. [20] 王易君,周本权,史平安,等.温度试验加速加载有效性分析[J].装备环境工程, 2019, 16(3): 63-66. ( |