[1] Ezhilvalavan S, Samper V, Seng TW, Xue JM, Wang J. Ferroelectric properties and leakage current characteristics of radio-frequency-sputtered SrBi2(V0.1Nb0.9)(2)O-9 thin films [J]. Journal of Applied Physics 2004, 4(4).
[2] Song-Min NAM, Takaaki TSURUMI. In Situ Epitaxial Growth of Lead Zirconate Titanate Films by Bias Sputtering at High RF Power [J]. Japanese journal of applied physics 2004, 5a(5a).
[3] Takeshi MATSUMOTO, Atsushi NIINO, Yasunori OHTSU, Tatsuya MISAWA, Akira YONESU, Hiroharu FUJITA, Shoji MIYAKE. Influence of Substrate Biasing on (Ba, Sr)TiO_3 Films Prepared by Electron Cyclotron Resonance Plasma Sputtering [J]. Japanese journal of applied physics 2004, 3(3).
[4] LOOKMAN A, BOWMAN R M, GREGG J M. Thickness independence of true phase transition temperatures in barium strontium titanate films [J]. Journal of Applied Physics 2004, 96.
[5] CHAN K Y, TSANG W S, MAK C L. Effects of composition of PbTiO3 on optical properties of (-x)bMg1/3Nb2/3O3-xPbTiO3 thin films [J]. Physical Review 2004, B69.
[6] Kim YM., Kim HG., Lee WJ.. DEPOSITION OF PZT FILMS BY MOCVD AT LOW TEMPERATURE AND THEIR CHANGE IN PROPERTIES WITH ANNEALING TEMPERATURE AND ZR/TI RATIO [J]. Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films 1996, 1/2(1/2).
[7] TAKAHIRO OIKAWA, HITOSHI MORIOKA, ATSUSHI NAGAI. Thickness scaling of poiycrystalline Pb(r, Ti)3 films down to 35 nm prepared by metalorganic chemical vapor deposition having good ferroelectric properties [J]. Applied Physics Letters 2004, 85.
[8] HIROSHI FUNAKUBO, GOUJI ASANO, TOMOHIKO OZEKI. Effect of solvent on MOCVD of Pb(r, Ti)3 films liquid-delivery source supply method [J]. Journal of the Electrochemical Society 2004, C46.
[9] Ho-Jung SUN, Eun Seok CHOI, Tae Kwon LEE, Tae Eun HONG, Jun-Mo YANG, Soon Yong KWEON, Nam Kyeong KIM, Seung Jin YEOM, Jae-Sung ROH, Hyun-chul SOHN, Jin Woong KIM. Effects of High-Temperature Metal-Organic Chemical Vapor Deposition of Pb(Zr, Ti)O_3 Thin Films on Structural Stabilities of Hybrid Pt/IrO_2/Ir Stack and Single-Layer Ir Bottom Electrodes [J]. Japanese journal of applied physics 2004, 5a(5a).
[10] Zhai JW, Hung TF, Chen HD. Relaxor and nonlinear behaviors of SrTiO3/BaTiO3 multilayers derived by a sol-gel process [J]. Applied physics letters 2004, 11(11).
[11] MAKI K, LIU B T, SO Y. Low-temperature fabrication of epitaxial and random-oriented Pb(r, Ti)3 capacitors with SrRuO3 electrodes on Si wafers [J]. Integrated Ferroelectrics 2003, 52.
[12] JIWEI ZHAI, HAYDN CHEN. Electric fatigue in Pb(b, Zr, Sn, Ti)3 thin films grown by a sol-gel process [J]. Applied Physics Letters 2003, 83(05).
[13] XU Y H. Ferroelectric thin films [M]. Pittsburgh, Pennsylvania, USA:Materials Research Society 1990.
[14] CHEUNG J T, MORGAN P E D, LOWNDES D H. Structural and electrical properties of La0.5Sr0.5CoO3 epitaxial films [J]. Applied Physics Letters 1993, 62.
[15] AL-SHAREEF H N, KINGON A I. Eelectrode materials for ferroelectric thin film capacitors and their effect on the electrical properties [A]. Switzerland:Gordon and Breach 1996.
[16] TUTTLE B A, DESU S B, RAMESH R. Ferroelectric thin films IV [M]. Pittsburgh:Materials Research Society 1995.
[17] B. T. Liu, K. Maki, S. Aggarwal, B. Nagaraj, V. Nagarajan, L. Salamanca-Riba, R. Ramesh, A. M. Dhote, O. Auciello. Low-temperature integration of lead-based ferroelectric capacitors on Si with diffusion barrier layer [J]. Applied physics letters 2002, 19(19).
[18] B. T. Liu, K. Maki, Y. So, V. Nagarajan, R. Ramesh, J. Lettieri, J. H. Haeni, D. G. Schlom, W. Tian, X. Q. Pan, F. J. Walker, R. A. McKee. Epitaxial La-doped SrTiO_(3) on silicon: A conductive template for epitaxial ferroelectrics on silicon [J]. Applied physics letters 2002, 25(25).
[19] MAKI K, LIU B T, VU H. Controlling crystallization of Pb(r, Ti)3 thin films on irO2 electrodes at low-temperature through interface engineering Low-temperature integration of epitaxial ferroelectric capacitors on Si using STO as a template [J]. Applied Physics Letters 2003, 82.
[20] WANG Y, GANPULE C, LIU B T. Epitaxial ferroelectric Pb(r, Ti)3 thin films on Si using SrTiO3 template layers [J]. Applied Physics Letters 2002, 80.
[21] MAKI K, LIU B T, SO Y. Low-temperature fabrication of epitaxial and random-oriented Pb(r, Ti)3 capacitors with SrRuO3 electrodes on Si wafers [J]. Integrated Ferroelectrics 2003, 52.
[22] LIU B T, KISLINSKII YU, HAO Z. Investigation on Ag/Pb(r0.53Ti0.47)3/YBa2Cu3O7-Three-terminal system with small gate area [J]. Applied Physics Letters 1999, 74.
[23] LIU B T, QIN Y L, HAO Z. Epitaxial growth of Pb(r, Ti)3/(a, Sr)uO4 heterostructures on SrTiO3 prepared by magnetron sputtering [J]. Superconductor Science and Technology 1999, 12.
[24] LIN Y, LIU B T, HAO Z. Fabrication and charactierstics of Ag/Pb(r0.53Ti0.47)/Ultrathin SiO2/Si and Ag/ Pb(r0.53Ti0.47)3/YBa2Cu3O7-δ Systems [J]. Ferroelectrics 2001, 252.
[25] HAO Z, LIU B T, LIN Y. Large-area ferroelectricity of epitaxial Pb(r0.53Ti0.47)3/YBa2Cu3O7-heterostructures [J]. Superconductor Science and Technology 2000, 13.
[26] ABT N E, MISIC P, ZEHNGUT D. [A]. Switzerland:Gordon and Breach 1992.
[27] Foster CM., Csencsits R., Vetrone J., Jammy R., Wills LA., Carr E., Amano J., Bai GR.. SINGLE-CRYSTAL PB(ZRXTI1-X)O-3 THIN FILMS PREPARED BY METAL-ORGANIC CHEMICAL VAPOR DEPOSITION - SYSTEMATIC COMPOSITIONAL VARIATION OF ELECTRONIC AND OPTICAL PROPERTIES [J]. Journal of Applied Physics 1997, 5(5).
[28] CHEUNG J T, MORGAN P E D, LOWNDES D H. Structural and electrical properties of La0.5Sr0.5CoO3 epitaxial films [J]. Applied Physics Letters 1993, 62.
[29] WITTMER M, NOSER J, MELCHOIR H. Oxidation kinetics of TiN thin films [J]. Journal of Applied Physics 1981, 52.
[30] DHOTE A M, MADHUKAR S, WEI W. Direct integration of ferroelectric La-Sr-Co-O/Pb-Nb-Zr-Ti-O/La-Sr-Co-O capacitors on silicon with conducting barrier layers [J]. Applied Physics Letters 1996, 68.
[31] PAZ DE ARAUJO C, APAZ DE, ARAUJO C, CUCHIARO J D. Fatigue-free ferroelectric capacitors with platinum electrodes [J]. NATURE 1995, 374.
[32] AGGARWAL S, DHOTE A M, LI H. Conducting barriers for vertical integration of ferroelectric capacitors on Si [J]. Applied Physics Letters 1999, 74.
[33] Takeshi Morita, Yasuo Wagatsuma, Yasuo Cho, Hitoshi Morioka, Hiroshi Funakubo, Nava Setter. Ferroelectric properties of an epitaxial lead zirconate titanate thin film deposited by a hydrothermal method below the Curie temperature [J]. Applied physics letters 2004, 25(25).
[34] Sergei V. Kalinin, Alexei Gruverman, Dawn A. Bonnell. Quantitative analysis of nanoscale switching in SrBi_(2)Ta_(2)O_(9) thin films by piezoresponse force microscopy [J]. Applied physics letters 2004, 5(5).
[35] KENJIRO FUJIMOTO, YASUO CHO. Nanosecond switching of nanoscale ferroelectric domains in congruent single-crystal LiTaO3 using scanning nonlinear dielectric microscopy [J]. Japanese Journal of Applied Physics 2004, 43(B).
