脉冲激光烧蚀沉积纳米Si膜动力学研究现状

  • 张荣梅 ,
  • 王英龙
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  • 河北大学,物理科学与技术学院,河北,保定,071002

网络出版日期: 2003-08-25

基金资助

河北省自然科学基金

Progress of Dynamic Study for Silicon Nanoparticales Deposited by Pulsed Laser Ablation

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Online published: 2003-08-25

摘要

Si基纳米材料在半导体光电集成领域有着十分诱人的前景,脉冲激光烧蚀技术是目前材料界和分析界最有前景的技术之一.介绍了脉冲激光烧蚀沉积Si基纳米材料的基本原理,从实验和理论方面对其动力学研究现状进行了综述.

关键词: 激光烧蚀; 沉积; 动力学

本文引用格式

张荣梅 , 王英龙 . 脉冲激光烧蚀沉积纳米Si膜动力学研究现状[J]. 河北大学学报(自然科学版), 2003 , 23(3) : 329 -333 . DOI: 10.3969/j.issn.1000-1565.2003.03.023

参考文献

[1] 彭英才, 何宇亮, Peng Yingcai, He Yuliang. 纳米硅薄膜研究的最新进展 [J]. 稀有金属 1999.doi:10.3969/j.issn.0258-7076.1999.01.009
[2] 张树东, 张为俊. 激光烧蚀Al靶产生的等离子体中辐射粒子的速度及激波 [J]. 物理学报 2001.doi:10.3321/j.issn:1000-3290.2001.08.021
[3] 钟志成, 李智华, 张端明, 关丽, ZHONG Zhi-cheng, LI Zhi-hua, ZHANG Duan-Ming, GUAN LI. 脉冲高能准分子激光烧蚀块靶产生等离子体的动力学过程的差分模拟 [J]. 强激光与粒子束 2001.
[4] 魏合林, 刘祖黎, 姚凯伦, Wei He-lin, Liu Zu-li, Yao Kai-lun. 超薄膜生长的Monte-Carlo研究 [J]. 物理学报 2000.doi:10.3321/j.issn:1000-3290.2000.04.037
[5] Werwa E, SERPHIN A A, CHIU L A. Synthesis and processing of silicon nanocrystallites using a pulsed laser ablation supersonic expansion method [J]. Applied Physics Letters 1994, 64(14).
[6] Shiba K, NAKAGAWA K, IKEDA M. Optical absorption and photoluminescence of self-assembled silicon quantan dots [J]. Japanese Journal of Applied Physics 1997, 36(10).
[7] Mizuta T., Takeuchi D., Kawaguchi Y., Makimura T., Murakami K.. Hydrogenation dynamics of Si nanoparticles with green photoluminescence [J]. Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials 2002, 0(0).
[8] Takeuchi D., Mizuta T., Makimura T., Yoshida S., Fujita M., Hata K. Shigekawa H., Murakami K.. Deposition dynamics of droplet-free Si nanoparticles in Ar gas using laser ablation [J]. Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials 2002, 0(0).
[9] OHYANAGI T, MIYASAITA A, MURAKIMI K. Time-and-space resolued X-ray aborpting spectroncopy of laser-ablated Si particles [J]. Japanese Journal of Applied Physics 1994, 33(05).
[10] MAKTVNARA T, SAKURAMOTO Y, MURARAMI K. Time-resolved x-ray absorption spectroscopy of laser-ablated silicon particles in xenon gas [J]. Japanese Journal of Applied Physics 1996, 35(06).
[11] Franghiadakis Y., Tzanetakis P., Fotakis C.. Energy distribution of ions produced by excimer-laser ablation of solid and molten targets [J]. Applied physics, A. Materials science & processing 1999, 4(4).
[12] 吴自勤, 王兵. 薄膜生长 [M]. 北京:科学出版社 2001.
[13] T.Scharf, H.U.Krebs. Influence of inert gas pressure on deposition rate during pulsed laser deposition [J]. Applied physics, A. Materials science & processing 2002, 5(5).
[14] Kelly R, BRAREN B. On the direct observation of the gas-dynamics of laser-pulse sputtering of polymers [J]. Applied Physics B-Lasers and Optics 1991, 53.
[15] KOOLS J C, RIET E, DIELEMAN J. A simple formalism for the prediction of angular distributions in laser ablation deposition [J]. Applied Surface Science 1993, 69.
[16] Dyer P E, ISSA A, KEY P H. Dynamics of excimer laser ablation of superconduetors in an oxygen environment [J]. Applied Physics Letters 1990, 57.
[17] PREDTECGENSKY M R, MAYOROV A P. Expansion of laser plasm in oxygen at laser deposition of HTSC films:theoretical model [J]. Applied Superconductivity 1993.
[18] Bulgakov AV., Bulgakova NM.. DYNAMICS OF LASER-INDUCED PLUME EXPANSION INTO AN AMBIENT GAS DURING FILM DEPOSITION [J]. Journal of Physics, D. Applied Physics: A Europhysics Journal 1995, 8(8).
[19] Yoshida T, TAKEYAMA S, Yamada Y. Nanometer-sized silicon crystallites prepared by excimer laser ablation in constant pressure inert gas [J]. Applied Physics Letters 1996, 68(13).
[20] VACH HOKGER, CHAABANA NIHED, PESLHERBE GILLES H. Direct rersus complex-mediated processes for Si+(2P+H2reactive scattering [J]. Chemical Physics Letters 2002, 352.
[21] M. C. Bacchus-Montabonel. Charge transfer recombination of Si~(2+) ions from atomic hydrogen [J]. Chemical Physics: A Journal Devoted to Experimental and Theoretical Research Involving Problems of Both a Chemical and Physical Nature 1998, 1/2(1/2).
[22] BACCHUS M C MONTABONEL. Recombination of silicon ions by electron capture from atomic hydrogen and helium [J]. Theoretical Chemistry Accounts 2000, 104.
[23] P. Honvault, M. C. Bacchus-Montabonel, M. Gargaud, R. McCarroll. Charge transfer between Si~(3+) and helium at thermal and low energies [J]. Chemical Physics: A Journal Devoted to Experimental and Theoretical Research Involving Problems of Both a Chemical and Physical Nature 1998, 3(3).
[24] NAHAR SULTANA N, WASEHRA J M. Elastic scattering of positrons and electrons by argon [J]. Physical Review A 1987, 135(05).
[25] SCHAPPE R SCOTT, SCHULMAN M BRUCE, ANDERSONN L W. Measurements of cross section for electron-impact excition into the metastable levels of argon and number desities of metastable argon atoms [J]. Physical Review A 1994, 50(01).
[26] RAPP DONALD, ENGLANDER PAULA-GOLDEN. Total cross section for ionization and attachment in gases by electron impact I positive ionization [J]. Journal of Chemical Physics 1965, 43(05).
[27] Han M., Gong YC., Zhou JF., Yin CR., Song FQ., Muto N., Takiya T., Iwata Y.. Plume dynamics during film and nanoparticles deposition by pulsed laser ablation [J]. Physics Letters, A 2002, 4(4).
[28] 张端明, 关丽, 郁伯铭, 李智华. Monte Carlo Simulation of Growth of Thin Film Prepared by Pulsed Laser [J]. 2003.
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