Junction-temperature measurement for life expecpancy of LED lighting products

doi:10.3969/j.issn.1000-1565.2025.02.005

Abstract

Abstract: The life expectancy of LED lighting products has reached tens of thousands of hours. How to forecast LED’s life expectancy by accelerated life testing method has become a hot topic. Thermal stress method has been widely accepted and could be an ideal method for accelerating life measurement. However, how to measure the junction-temperature, which is closely related to the lifetime prediction, hasn’t been solved properly.A junction-temperature indirect test method by testing the change in junction voltage was introduced in this paper, and the possible influence on lifetime prediction caused by junction-temperature test error was analyzed in detail.

Key words: junction-temperature, junction voltage, thermal stress, accelerated life testing, temperature coefficient

CLC Number:

TN312

WU Deqi, YU Bin, ZHAO Nannan, LI Weiting, CHU Xiaoxing. Junction-temperature measurement for life expecpancy of LED lighting products[J]. Journal of Hebei University(Natural Science Edition), 2025, 45(2): 148-156.

References

[1] SCHUBERT E F, KIM J K. Solid-state light sources getting smart[J]. Science, 2005, 308(5726):1274-1278. DOl: 10.1126/science.1108712.
[2] KRAMES M R, SHCHEKIN O B, MUELLER-MACH R, et al. Status and future of high-power light-emitting diodes for solid-state lighting[J]. J DispTechnol, 2007, 3(2): 160-175. DOI: 10.1109/JDT.2007.895339.
[3] HAHN B, WEIMAR A, PETER M, et al. High-power InGaN LEDs: present status and future prospects [C] //Conference on Light-Emitting Diodes: Research, Manufacturing, and Applications XII. San Jose: International Society for Optics and Photonics, 2008, 6910: 691004. DOI: 10.1117/12.767255.
[4] 伍玉莹,李晟,孟庆慧,等.基于近似法的LED光源寿命预测[J].现代计算机, 2022,28(5):82-85. DOI: 10.3969/j.issn.1007-1423.2022.05.013.
[5] 王潇洵.LED照明产品加速测试中结温测量及寿命预测修正方法研究[D].长春: 中国科学院大学(中国科学院长春光学精密机械与物理研究所), 2019.
[6] SINGER J, MANGUM S, LUNDBERG J. Testing high brightness LEDs relative to application environment[C] //SPIE Proceedings", "Sixth International Conference on Solid State Lighting. San Diego, California, USA. SPIE, 2006, 6337: 6337lC-1. DOI: 10.1117/12.682290.
[7] NARENDRAN N, DENG L, PYSAR R M, et al. Performance characteristics of high-power light-emitting diodes[C] //Third International Conference on Solid State Lighting. SPIE, 2004, 5187: 267-275. DOI:10.1117/12.515647.
[8] HU J Z, YANG L Q, SHIN M W. Electrical, optical and thermal degradation of high power GaN/InGaN light-emitting diodes[J]. J Phys D: ApplPhys, 2008, 41(3): 035107.DOI: 10.1088/0022-3727/41/3/035107.
[9] 陈奇.大功率LED封装热可靠性与寿命预测研究[D].武汉:华中科技大学,2018.
[10] 郑明明.LED光源光衰测试与补偿方法研究[D].苏州:苏州科技大学, 2022.DOI: 10.27748/ d.cnki.gszkj.2021.000272.
[11] 余彬海,王垚浩.结温与热阻制约大功率LED发展[J].发光学报,2005, 26(6): 761-766. DOI: 10.3321/j.issn: 1000-7032.2005.06.014.
[12] ARIK M, PETROSKI J, WEAVER S.Thermal challenges in the future generation solid state lighting applications: light emitting diodes[C] //Conference on Thermal & Thermo-mechanical Phenomena in Electronic Systems. IEEE, HaWaii, USA: 2002:113-120. DOI:10.1109/ITHERM.2002.1012446.
[13] 王丽红,胡长宏,范鲜红,等.基于脉冲法的LED结温测量实验仪[J].实验技术与管理, 2020, 37(8): 96-101. DOI:10.16791/j.cnki.sjg.2020.08.021.
[14] XI Y, SCHUBERT E F. Junction-temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method[J]. ApplPhysLett, 2004, 85(12): 2163-2165.DOI: 10.1063/1.1795351.
[15] Methodology for the thermal measurement of component packages(Single semiconductor devices): JEDEC JESD 51[S]. JEDEC, 2012.
[16] Integrated circuit thermal measurement method - electrical test method:(Single semiconductor Device): JEDEC JESD 51-1[S]. JEDEC, 1995.
[17] Guidelines for reporting and using electronic package thermal information: JEDEC JESD 51-12[S]. JEDEC, 2012.
[18] Glossary of Thermal Measurement Terms and Definitions: JEDEC JESD 51-13[S]. JEDEC, 2009.
[19] Transient Dual Interface Test Method for the Measurement of Thermal Resistance Junction-to-Case of Semiconductor Devices with Heat Flow through a Single Path: JEDEC JESD 51-14[S]. JEDEC, 2010.
[20] Overview of Methodologies for the Thermal Measurement of Single- and Multi-Chip, Single- and Multi-PN-Junction Light-Emitting Diodes(LEDs): JEDEC JESD 51-50[S]. JEDEC, 2012.
[21] Guidelines for Combining CIE 127-2007 Total Flux Measurements with Thermal Measurements of LEDs with Exposed Cooling Surface: JEDEC JESD 51-52[S]. JEDEC, 2012.
[22] Terms, Definitions and Units Glossary for LED Thermal Testing: JEDEC JESD 51-53[S]. JEDEC, 2012.
[23] ILV: International Lighting Vocabulary, 2nd Edition: CIE S 017/E: 2020[S]. CIE, 2020.
[24] CIE 127: 2007 Technical Report, Measurement of LEDs[S]. Published by the COMMISSION INTERNATIONALE DE LECLAIRAGE CIE Central Bureau, Kegelgasse 27, A-1030 Vienna, AUSTRIA. WWW: http://www.cie.co.at/, ISBN 978 3 901 906 58 9.
[25] MIL-STD-750D METHOD 3101.3, Thermal Impedance(Response)Testing of Diodes[S].
[26] ANSI/IES(2022a). Lighting science: nomenclature and de nitions for illuminating engineering[S]. LS-1-22. New York, NY: ANSI.
[27] ANSI/IESNA IES-LM-80-08, Approved Method for Measuring Lumen Maintenance of LED Light Sources[S] , 120 Wall Street. 17th Floor, New York. NY 10005. www.ies.org. ISBN#978-0-87995-227-3
[28] Implementation of the Electrical Test Method for the Measurement of Real Thermal Resistance and Impedance of Light-Emitting Diodes with Exposed Cooling: JEDEC JESD 51-51[S]. JEDEC, 2012.
[29] 武德起, 武夷平, 楚晓杏. LED球泡灯光衰激活能评估方法[J]. 河北大学学报(自然科学版),2023,43(6):589-594.DOI:10.3969/j.issn.1000-1565.2023.06.004. (