[1] 方容川. 固体光谱学 [M]. 合肥:中国科学技术大学出版社 2001.
[2] CANHAM L T. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers [J]. Applied Physics Letters 1990, 57.
[3] PARK Y B, RHEE S W. Bulk and interface properties of low-temperature silicon nitride thin films deposited by remote plasma enhanced chemical vapor deposition [J]. Journal of Materials Science 2001, 12.
[4] Chen KJ, Ma ZY, Huang XF, Xu J, Li W, Sui YP, Mei JX, Zhu D. Comparison between light emission from Si/SiNx and Si/SiO2 multilayers: role of interface states [J]. Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites 2004, 0(0).
[5] WANG Y, SHEN D Z, LIU Y C. Visible photoluminescence of Si clusters embedded in silicon nitride films by plasma-enhanced chemical vapor deposition [J]. Physica E-Low-Dimensional Systems & Nanostructures 2005, 27.
[6] MA Z X, LIAO X B, KONG G L. Absorption spectra of nanocrystalline silicon embeded in SiO2 matrix [J]. Applied Physics Letters 1999, 75.
[7] YIN Z, TAN H S, SMITH F W. Determination of the optical constants of diamond films with a rough growth surface [J]. Diamond and Related Materials 1996, 5.
[8] YU Wei, WANG Bao-zhu, LU Wan-Bing, YANG Yan-bin, HAN Li, FU Guang-Sheng. Growth of Nanocrystalline Silicon Films by Helicon Wave Plasma Chemical Vapour Deposition [J]. 2004. |
