Preparation of SnO2 thin film and photoelectric properties

doi:10.3969/j.issn.1000-1565.2017.02.003

Journal of Hebei University (Natural Science Edition) ›› 2017, Vol. 37 ›› Issue (2): 123-127.DOI: 10.3969/j.issn.1000-1565.2017.02.003

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Preparation of SnO₂ thin film and photoelectric properties

LIU Chuo¹,MA Lei^1,2,PENG Yingcai¹

1.College of Electronic and Informational Engineering, Hebei University, Baoding 071002, China; 2.Key Laboratory of Digital Medical Engineering of Hebei Province, Hebei University, Baoding 071002, China

Received:2016-09-18 Online:2017-03-25 Published:2017-03-25

Abstract

Abstract: Sn thin films with thickness of 205 nm were deposited on quartz substrates surface by vacuum thermal evaporation method using high purity Sn wire as evaporation source.Then,the films were under oxidation treatment in the temperature range of 200~500 °C in high purity oxygen atmosphere.The films were characterized using X-ray diffraction(XRD),Raman spectrometer,spectrophotometer and source meter for their structural,optical and electrical properties respectively.The measure for structural studies reveal that SnO₂ of tetragonal system with a single crystal orientation is obtained under the high temperature.The optical measurement shows that thin film optical band gap in creases with oxidation temperature rises.The current–voltage characteristics show that electrical conductivity decrease with increasing oxidation treatment.

Key words: vacuum evaporation, Sn thin film, SnO₂, oxidation treatmen

CLC Number:

TG156.21

LIU Chuo,MA Lei,PENG Yingcai. Preparation of SnO₂ thin film and photoelectric properties[J]. Journal of Hebei University (Natural Science Edition), 2017, 37(2): 123-127.

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Preparation of SnO₂ thin film and photoelectric properties

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