Silicon nanowires were synthesized on n-Si (111) substrates using Au film as catalyst and SiH4 gas as a vapor phase reactant based on vapor-liquid-solid mechanism. The measurement of scanning electron microscopy shows that their diameters mainly range from 20～200 nm and their lengths are from several micrometers to dozens of micrometers. The composition is measured with energy-dispersive X-ray spectrometry. The effects of the growth temperature, SiH_4 flow rate ,thickness of Au film and growth time on the formation and structures of Si nanowires were discussed.
BAI Zhen-hua
,
FAN Zhi-dong
,
CHENG Xu
,
PENG Ying-cai
. Growth of Silicon Nanowires via Vapor-Liquid-Solid Mechanism and Its Structural Characteristics[J]. Journal of Hebei University(Natural Science Edition), 2009
, 29(6)
: 582
-586
.
DOI: 10.3969/j.issn.1000-1565.2009.06.007
[1] 裴立宅, 唐元洪. 硅纳米线的制备与生长机理 [J]. 材料科学与工程学报 2004.doi:10.3969/j.issn.1673-2812.2004.06.038
[2] 邢英杰, 奚中和, 俞大鹏, 杭青岭, 严涵斐, 冯孙齐, 薛增泉. 硅纳米线的固-液-固热生长及升温特性研究 [J]. 电子与信息学报 2003.
[3] TALIN A A, HUNTER L L, LEONARD F. Large area, dense silicon nanowire array chemical sensors [J]. Applied Physics Letters 2006, 89.
[4] Jong-in Hahm, Charles M. Lieber. Direct Ultrasensitive Electrical Detection of DNA and DNA Sequence Variations Using Nanowire Nanosensors [J]. Nano letters 2004, 1(1).
[5] ADHIKARI H, MCLNTYRE P C, SUN S Y. Photoemission studies of passivation of gemanium nanowires [J]. Applied Physics Letters 2005, 87.
[6] Fukata N, Oshima T, Okada N, Kizuka T, Tsurui T, Ito S, Murakami K. Phonon confinement in silicon nanowires synthesized by laser ablation [J]. Physica, B. Condensed Matter 2006, 0(0).
[7] WANG Yewu, SCHMIDT V, SENZ S. Epitaxial growth of silicon nanowires using an aluminium catalyst [J]. Nature Nanotechnology 2006.
[8] L.Z. Pei, Y.H. Tang, Y.W. Chen, C. Guo, W. Zhang, Y. Zhang. Silicon nanowires grown from silicon monoxide under hydrothermal conditions [J]. Journal of Crystal Growth 2006, 2(2).
[9] Sakulchaicharoen N., Resasco DE.. Temperature dependence of the quality of silicon nanowires produced over a titania-supported gold catalyst [J]. Chemical Physics Letters 2003, 3-4(3-4).
[10] KIKKAWA J, OHNO Y, TAKEDA S. Growth rate of silicon nanowires [J]. Applied Physics Letters 2005, 86.
[11] SOOD D K, SEKHAR P K, BHANSALI S. Ion implantation based selective synthesis of silica nanowires on silicon wafers [J]. Applied Physics Letters 2006, 88.
[12] Lugstein A, Steinmair M, Hyun YJ, Bertagnolli E, Pongratz P. Ga/Au alloy catalyst for single crystal silicon-nanowire epitaxy [J]. Applied physics letters 2007, 2(2).
[13] Minsung Jeon, Koichi Kamisako. Aspect of aluminum-catalyzed silicon nanowires synthesized at low temperature and effect of hydrogen radical treatment [J]. Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics 2009, 1/2(1/2).
[14] FENG Sunqi, YU Dapeng, ZHANG Hongzhou. The growth mechanism of silicon nanowires and quantum confinement effect [J]. Journal of Crystal Growth 2000, 209.
