Growth of Silicon Nanowires via Vapor-Liquid-Solid Mechanism and Its Structural Characteristics

doi:10.3969/j.issn.1000-1565.2009.06.007

Abstract

Abstract: Silicon nanowires were synthesized on n-Si (111) substrates using Au film as catalyst and SiH4 gas as a vapor phase reactant based on vapor-liquid-solid mechanism. The measurement of scanning electron microscopy shows that their diameters mainly range from 20～200 nm and their lengths are from several micrometers to dozens of micrometers. The composition is measured with energy-dispersive X-ray spectrometry. The effects of the growth temperature, SiH_4 flow rate ,thickness of Au film and growth time on the formation and structures of Si nanowires were discussed.

Key words: silicon nanowires, Au catalyst, vapor-liquid-solid growth, structural characterization

CLC Number:

TB383

BAI Zhen-hua,FAN Zhi-dong,CHENG Xu,PENG Ying-cai. Growth of Silicon Nanowires via Vapor-Liquid-Solid Mechanism and Its Structural Characteristics[J]. Journal of Hebei University (Natural Science Edition), 2009, 29(6): 582-586.

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