Journal of Hebei University(Natural Science Edition) >

2007 , Vol. 27 >Issue 6: 620 - 624

DOI: https://doi.org/10.3969/j.issn.1000-1565.2007.06.014

Relationship Between ESD Injected Times and Latent Damage in Semi-conductor Transistors

  • YANG Jie ,
  • LIU Shang-he ,
  • LIU Hong-bing ,
  • QI Shu-feng
Expand

Online published: 2007-11-25

Fold

Cite this article

YANG Jie , LIU Shang-he , LIU Hong-bing , QI Shu-feng . Relationship Between ESD Injected Times and Latent Damage in Semi-conductor Transistors[J]. Journal of Hebei University(Natural Science Edition), 2007 , 27(6) : 620 -624 . DOI: 10.3969/j.issn.1000-1565.2007.06.014

Options
Outlines

/

〈 〉