Journal of Hebei University(Natural Science Edition) >

2016 , Vol. 36 >Issue 5: 468 - 473

DOI: https://doi.org/10.3969/j.issn.1000-1565.2016.05.004

Research progress of amorphous to microcrystalline phase transition silicon thin film solar cell

  • FAN Shanshan ,
  • YANG Yanbin ,
  • YU Wei ,
  • FU Guangsheng
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  • 1.School of Science, Hebei University of Technology, Tianjin 300000, China; 2.College of Physics Science and Technology, Hebei University, Baoding 071002, China

Received date: 2016-03-10

  Online published: 2016-09-25

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Abstract

The microstructure,optoelectronic property and the application in solar cell of Si films and SiGe alloy films near phase transition from amorphous to microcrystalline are outlined.The proto-crystalline Si films(proto-Si)with improved medium range order are grown at the amorphous phase side of the phase transition region,showing remarkable stability against light soaking.The high quality nano-crystalline Si films(nano-Si)with low defect density are grown just at the microcrystalline phase side of the phase transition region,showing high carrier mobility and higher long wavelength response due to the embedded Si nano-crystals.The triple-junction solar cell has achieved stable efficiency of 13.6% by using proto-Si,nano-Si and microcrystalline Si(uc-Si)as absorber layer.Increasing Ge content can further decrease the optical band gap of SiGe alloy film.By introducing SiGe alloy films as the absorber layer of sub-cell,the triple-junction stacked solar cell attains an initial cell efficiency of 16.3%,and the theoretical conversion efficiency of simulated quadruple junction solar cell can reach 20%.

Key words： phase transition from amorphous to microcrystalline; medium range order; light-induced degradation; multi-junction solar cell

Cite this article

FAN Shanshan , YANG Yanbin , YU Wei , FU Guangsheng . Research progress of amorphous to microcrystalline phase transition silicon thin film solar cell[J]. Journal of Hebei University(Natural Science Edition), 2016 , 36(5) : 468 -473 . DOI: 10.3969/j.issn.1000-1565.2016.05.004

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