Research progress of amorphous to microcrystalline phase transition silicon thin film solar cell

doi:10.3969/j.issn.1000-1565.2016.05.004

Abstract

Abstract: The microstructure,optoelectronic property and the application in solar cell of Si films and SiGe alloy films near phase transition from amorphous to microcrystalline are outlined.The proto-crystalline Si films(proto-Si)with improved medium range order are grown at the amorphous phase side of the phase transition region,showing remarkable stability against light soaking.The high quality nano-crystalline Si films(nano-Si)with low defect density are grown just at the microcrystalline phase side of the phase transition region,showing high carrier mobility and higher long wavelength response due to the embedded Si nano-crystals.The triple-junction solar cell has achieved stable efficiency of 13.6% by using proto-Si,nano-Si and microcrystalline Si(uc-Si)as absorber layer.Increasing Ge content can further decrease the optical band gap of SiGe alloy film.By introducing SiGe alloy films as the absorber layer of sub-cell,the triple-junction stacked solar cell attains an initial cell efficiency of 16.3%,and the theoretical conversion efficiency of simulated quadruple junction solar cell can reach 20%.

Key words: phase transition from amorphous to microcrystalline, medium range order, light-induced degradation, multi-junction solar cell

CLC Number:

O756

FAN Shanshan,YANG Yanbin,YU Wei,FU Guangsheng. Research progress of amorphous to microcrystalline phase transition silicon thin film solar cell[J]. Journal of Hebei University (Natural Science Edition), 2016, 36(5): 468-473.

References

[1] 蔡红军,赵佳,程伟科.太阳能光伏发电系统[J].内蒙古科技与经济,2013,8:128-129.
[2] 王勃华.光伏行业2015年回顾与2016年展望[Z].光伏行业2015年回顾与2016年展望研讨会,北京,2016.
[3] CHAPIN D M,FULLER C S,PEARSON G L.A new silicon p-n junction photocell for converting solar radiation into electrical power [J].Journal of the Applied Physics,1954,25:676-677.DOI:10.1063/1.1721711.
[4] 刘志全,杨淑利,濮海玲.空间太阳能电池阵的发展现状及趋势[J].航天器工程,2012,21(6):112-118.DOI:10.3969/j.issn.1673-8748.2012.06.018. LIU Z Q,YANG S L,PU H L.Development and trend of space solar array technology[J].Spacecraft Engineering,2012,21(6):112-118.
[5] 董磊.柔性薄膜电池与光伏建筑一体化[J].中国建筑防水,2011,15:27-32.DOI: 10.15901/j.cnki.1007-497x.2011.15.006. DONG L.Flexible thin film silicon solar cells & BIPV[J].China Building Waterproofing,2011,15:27-32.
[6] 李娅莉,赵欲晓,苏建梅,等.柔性太阳能电池在服装领域的应用[J].上海纺织科技,2013,41(2):1-4.
[7] SEATBLER D L,WRONSKI C R.Reversible conductivity changes in discharge-produced amorphous Si [J].Applied Physics Letters,1977,31(4):292 -294.DOI:10.1063/1.89674.
[8] GUHA S,NARASIMHAN K L,PIETRUSZKO S M.On light-induced effect in amorphous hydrogenated silicon[J].Journal of Applied Physics,1981,52(2):859-860.DOI: 10.1063/1.328849.
[9] SCHROPP R E I,VEEN M K van,WERF C H M van der,et al.Protocrystalline silicon at high rate from undiluted silane[J]. Materials Research Society Symposium Proceeding,2004,808:841-846.
[10] TSU D V,CHAO B S,OVSHINSKY S R.Effect of hydrogen dilution on the structure of amorphous silicon alloys[J].Applied Physics Letters,1997,71:1317-1319.DOI:10.1063/1.119928.
[11] MAHAN A H,YANG J,GUHA S,et al.Structural changes in a-Si:H film crystallinity with high H dilution[J].Physical Review B,2000,61:1677-1680.DOI: 10.1103/PhysRevB.61.1677.
[12] 张世斌,廖显伯,安龙,等.非晶/微晶过渡区域硅薄膜的微区喇曼散射研究[J].物理学报,2002,51(8):1811-1815. ZHANG S B,LIAO X B,AN L,et al.Micro-Raman study on hydrogenated proto-crystalline silicon films[J].Chinese Journal of Physics,2002,51(8):1811-1815.
[13] GUHA S,YANG J,WILLIAMSON D L,et al.Structural,defect,and device behavior of hydrogenated amorphous Si near and above the onset of microcrystallinity[J].Applied Physics Letters,1999,74:1860-1862.DOI:10.1063/1.123693.
[14] 郝会颖,孔光临,刁宏伟,等.非晶/微晶相变区硅薄膜迁移率寿命乘积的研究[Z].第八届光伏会议,深圳,2004.
[15] 王岩,韩晓艳,任慧志,等.相变区硅薄膜材料的光稳定性[J].物理学报,2006,55(2):947-951. WANG Y,HAN X Y,REN H Z,et al.Stability of mixed phase silicon thin film material under light soaking[J].Chinese Journal of Physics,2006,55(2):947-951.
[16] 郝会颖,孔光临,曾湘波,等.非晶/微晶相变区硅薄膜及其太阳能电池[J].物理学报,2005,54(7):3327-3331. HAO H Y,KONG G L,ZENG X B,et al.Transition films from amporphous to microcrystalline silicon and solar cells[J].Chinese Journal of Physics,2005,54(7):3327-3331.
[17] TZOLOV M,FINGER F,CARIUS R,et al.Optical and transport studies on thin microcrystalline silicon films prepared by very high frequency glow discharge for solar cell applications[J].J Appl Phys,1997,81:7376.DOI:10.1063/1.365354.
[18] HOUBEN L,SCHOLTEN C,LUYSBERG M,et al.Growth of microcrystalline nip Si solar cells: role of local epitaxy[J].Journal of Non-Crystalline Solids,2002,299-302:1189-1193.DOI:10.1016/S0022-3093(1)01138-3.
[19] GUHA S.Thin film silicon solar cells grown near the edge of amorphous to microcrystalline transition[J].Solar Energy,2004,77:887-892.DOI:10.1016/j.solener.2004.06.014.
[20] VETTERL O,FINGER F,CARIUS R,et al.Intrinsic microcrystalline silicon: A new material for photovoltaics[J].Solar Energy Materials & Solar Cells,2000,62:97-108.DOI:10.1016/S0927-0248(99)00140-3.
[21] SCHROPP R E I,LI H,FRANKEN R H,et al.Nanostructured thin films for multiband-gap silicon triple junction solar cells[J].Thin Solid Films,2008,516:6818-6823.DOI:10.1016/j.tsf.2007.12.089.
[22] SCHROPP R E I,RATH J K,LI H,et al.Growth mechanism of nanocrystalline silicon at the phase transition and its application in thin film solar cells[J].Journal of Crystal Growth,2009,311:760-764.DOI: 10.1016/ j.jcrysgro.2008.09.155.
[23] 郝会颖,孔光临,曾湘波,等.非晶/微晶两相硅薄膜电池的计算机模拟[J].物理学报,2005,52(7):3370-3374. HAO H Y,KONG G L,ZENG X B,et al.Computer simulation of a-Si:H /μc-Si:H diphasic silicon solar cells[J].Chinese Journal of Physics,2005,52(7):3370-3374.
[24] SCHüTTAUFN J W,NIESEN B,LÖFGREN L,et al.Amorphous silicon-germanium for triple and quadruple junction thin-film silicon based solar cells[J].Solar Energy Materials & Solar Cells,2015,133:163-169.DOI:10.1016/j.solmat.2014.11.006.
[25] KRAUSEA M,STIEBIG H,CARIUS R,et al.Structural and optoelectronic properties of microcrystalline silicon germanium[J].Journal of Non-Crystalline Solids,2002,299:158-162.DOI: 10.1016/S0022-3093(01)01195-4.
[26] SUN J Y,JUN K K,SEONG H L,et al.Phase transition of hydrogenated SiGe thinfilms in plasma-enhanced chemical vapor deposition[J].Thin Solid Films,2013,546:362-366.DOI:10.1016/j.tsf.2013.04.071.
[27] 李毅,胡盛明.非晶硅叠层太阳能电池的现状与发展方向 [J].真空科学与技术学报,2000,20(3): 222-225.DOI:10.13922/j.cnki.cjovst.2000.03.019. LI Y,HU S M.Development trends in amorphous silicon tandem solar cells[J].Vacuum Science and Technology,2000,20(3):222-225.
[28] 林鸿生,林罡,段开敏.a-Si/μc-Si 叠层结构太阳能电池中的光诱导性能衰退[J].固体电子学研究与进展,2000,20(8): 313-317. LIN H S,LIN G,DUAN K M.Light-induced degradation in a-Si/μc-Si tandem solar Cells[J].Research & Progress of SSE,2000,20(8): 313-317.
[29] 薛俊明,麦耀华,赵颖,等.薄膜非晶硅/微晶硅叠层太阳能电池的研究[J].太阳能学报,2005,26(2): 166-169. XUE J M,MAI Y H,ZHAO Y,et al.Investigation on a-Si/μc-Si tandem solar cells[J].Acta Energiae Solaris Sinica,2005,26(2): 166-169.
[30] YANG J,BANERJEE A,GUHA S.Triple-junction amorphous silicon alloy solar cell with 14.6% initial and 13.0% stable conversion efficiencies[J].Applied Physics Letters,1997,70:2975-2977.DOI: 10.1063/1.118761.
[31] SAI H,MATSUI T,KOIDA T.Triple-junction thin-film silicon solar cell fabricated on periodically textured substrate with a stabilized efficiency of 13.6%[J].Applied Physics Letters,2015,106(21):113512.DOI:10.1063/1.4921794.
[32] YAN B J,YUE G Z,YANG J,et al.Correlation of current mismatch and Fill factor in amorphous and nanocrystalline silicon based high efficiency multi-junction solar cells[Z].Photovoltaic Specialists Conference,San Diego,2008.
[33] YAN B J,YUE G Z,SIVEC L,et al.Innovative dual function nc-SiOx:H layer leading to a >16% efficient multi-junction thinfilm silicon solar cell[J].Applied Physics Letters,2011,99: 113512.DOI:10.1063/1.3638068.
[34] ISABELLA O,SMETS A H M,ZEMAN M.Thin-film silicon-based quadruple junction solar cells approaching 20% conversion efficiency[J].Solar Energy Materials & Solar Cells,2014,129:82-89.DOI:10.1016/j.solmat.2014.03.021.