Photoluminescence enhancement effect of CH3NH3PbI3 film

doi:10.3969/j.issn.1000-1565.2016.05.003

Abstract

Abstract: The photoluminescence enhancement of CH₃NH₃PbI₃ film and its effect on carrier recombination dynamics were studied by using photoluminescence spectroscopy.Experimental results demonstrate that the rate of photoluminescence enhancement is higher when the power density of light soaking increases.And oxygen atmosphere is helpful to photoluminescence enhancement of CH₃NH₃PbI₃ film.The reduction of defect density in the film is the main mechanism responsible for the photoluminescence enhancement.Furthermore,the effect of light soaking on the recombination dynamics of free carriers and shallow trapped carriers was analyzed by microwave absorption dielectric spectroscopy. Densities of free carriers and shallow trapped carriers in CH₃NH₃PbI₃ film show an obvious increase after the light soaking.

Key words: CH₃NH₃PbI₃, photoluminescence enhancement, defect, carrier recombination dynamics

CLC Number:

O472

DANG Wei,LIU Xu,BAI Jingjing,ZHAO Jinjin,ZHANG Lianshui. Photoluminescence enhancement effect of CH₃NH₃PbI₃ film[J]. Journal of Hebei University (Natural Science Edition), 2016, 36(5): 462-467.

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Photoluminescence enhancement effect of CH₃NH₃PbI₃ film

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