超薄层SiOxNy栅介质薄膜的制备与研究进展

河北大学学报(自然科学版) ›› 2005, Vol. 25 ›› Issue (6): 673-679.DOI: 10.3969/j.issn.1000-1565.2005.06.024

• • 上一篇

超薄层SiOxNy栅介质薄膜的制备与研究进展

张弘,范志东,田书凤,彭英才

河北大学,电子信息工程学院,河北,保定,071002

出版日期:2005-11-25 发布日期:2005-11-25
基金资助:
河北省自然科学基金，南京大学校科研和教改项目

Progress on the Fabricated Technique of Ultrathin SiOxNy Films

ZHANG Hong,FAN Zhi-dong,TIAN Shu-feng,PENG Ying-cai

Online:2005-11-25 Published:2005-11-25

摘要/Abstract

摘要： 在0.1μm级的Si-CMOS器件及其集成电路中,作为替代传统SiO2栅介质的首选材料,超薄SiOxNy膜已被广泛研究和应用.本文介绍了近几年SiOxNy栅介质制备技术的研究进展,讨论了各种方法的优缺点,并展望了SiOxNy栅介质制备技术的未来发展趋势.

关键词: SiOxNy栅介质, 热退火N化, 等离子体氮化, 化学气相沉积, 氮注入

中图分类号:

O848.4

张弘,范志东,田书凤,彭英才. 超薄层SiOxNy栅介质薄膜的制备与研究进展[J]. 河北大学学报(自然科学版), 2005, 25(6): 673-679.

ZHANG Hong,FAN Zhi-dong,TIAN Shu-feng,PENG Ying-cai. Progress on the Fabricated Technique of Ultrathin SiOxNy Films[J]. Journal of Hebei University (Natural Science Edition), 2005, 25(6): 673-679.

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