CsPbI3量子点在不同极性溶剂的光学特性

doi:10.3969/j.issn.1000-1565.2020.06.004

摘要/Abstract

摘要： 全无机钙钛矿CsPbI₃量子点具有发射谱线窄、荧光量子产率高和稳定性强等特点,在红光LEDs和新型太阳电池领域具有广阔的应用前景.本文通过热注入法在正己烷溶剂中合成了CsPbI₃ 量子点, 并对其结构和光学特性进行表征,结果表明,量子点主要的发光机制是量子限制区自由激子复合.通过改变溶剂的种类(正己烷、甲苯、乙酸乙酯、乙酸甲酯)对量子点的光学特性进行了调整,研究发现随着溶剂极性的增加,发光峰位从615 nm红移至660 nm,这是因为极性溶剂对量子点表面具有修饰作用,通过改变溶液极性实现CsPbI₃量子点发光峰位调节的条件为制备波长可调的光电器件提供了一定的实验参考.

关键词: CsPbI₃, 极性溶剂, 表面修饰, 发光二极管

Abstract: All-inorganic perovskite CsPbI₃ quantum dots have the characteristics of narrow emission spectrum lines, high fluorescence quantum yield, and strong stability. They have broad application prospects in the fields of red LEDs and new solar cells. In this paper, CsPbI₃ quantum dots were synthesized in n-hexane solvent by hot injection method, and their structure and optical characteristics were characterized. The results show that the main light-emitting mechanism of quantum dots is free exciton recombination in the weak quantum confinement region. The optical properties of the quantum dots were adjusted by changing the type of solvent(n-hexane, toluene, ethyl acetate, methyl acetate). It was found that the luminescence peak position shifted from 615 to 660 nm as the polarity of the solvent increased. This is because the polar solvent has a modification effect on the surface of the quantum dots, and the conditions for adjusting the emission peak position of CsPbI₃ quantum dots by changing the polarity of the solution provide an experimental reference for the preparation of wavelength-tunable photovoltaic devices.

Key words: CsPbI₃, polar solvents, surface modification, light-emitting diodes

中图分类号:

O469

孙春雨,李婧,王新占,郭成锁,于威. CsPbI₃量子点在不同极性溶剂的光学特性[J]. 河北大学学报(自然科学版), 2020, 40(6): 585-590.

SUN Chunyu, LI Jing, WANG Xinzhan, GUO Chengsuo, YU Wei. Optical properties of CsPbI₃ quantum dots in different polar solvents[J]. Journal of Hebei University(Natural Science Edition), 2020, 40(6): 585-590.

参考文献

[1] KOUTSELAS I, BAMPOULIS P, MARATOU E, et al. Some unconventional organic inorganic hybrid low-dimensional semiconductors and related light-emitting devices[J]. J Physical Chemistry C, 2011, 115(17): 8475-8483. DOI:10.1021/jp111881b.
[2] ZHAO Y, ZHU K. Organic-inorganic hybrid lead halide perovskites for optoelectronic and electronic applications[J]. Chemical Society Reviews, 2016, 45(3): 655-689. DOI:10.1039/c4cs00458b.
[3] ERA M, MORIMOTO S, TSUTSUI T, et al. Organic-inorganic heterostructure electroluminescent device using a layered perovskite semiconductor(C₆H₅C₂H₄NH₃)2PbI₄[J]. Applied Physics Letters, 1994, 65(6): 676-678. DOI:10.1063/1.112265.
[4] LIANG D, PENG Y, FU Y, et al. Color-pure violet-light-emitting diodes based on layered lead halide perovskite nanoplates[J]. ACS Nano, 2016, 10(7): 6897-6904. DOI:10.1021/acsnano.6b02683.
[5] DOCAMPO P, BEIN T. A long-term view on perovskite optoelectronics[J]. Acc Chem Res, 2016, 49(2): 339-346. DOI:10.1021/acs.accounts.5b00465.
[6] KIM Y H, CHO H, LEE T W. Metal halide perovskite light emitters[J]. Proceedings of the National Academy of ences of the United States of America, 2016, 113(42): 11694-11702. DOI:10.1073/pnas.1607471113.
[7] XING J, YAN F, ZHAO Y, et al. High-efficiency light-emitting diodes of organometal halide perovskite amorphous nanoparticles[J]. ACS Nano, 2016, 10(7): 6623-6630. DOI:10.1021/acsnano.6b01540.
[8] TAN Z K, MOGHADDAM R S, LAI M L, et al. Bright light-emitting diodes based on organometal halide perovskite[J].Nature Nanotechnology, 2014, 9(9):687. DOI:10.1038/nnano.2014.149.
[9] PROTESESCU L, YAKUNIN S, BODNARCHUK M I, et al. Nanocrystals of cesium lead halide perovskites(CsPbX₃, X=Cl, Br, I): novel optoelectronic materials showing bright emission with wide color gamut[J]. Nano Letters, 2015, 15(6): 3692-3696. DOI:10.1021/nl5048779.
[10] LI X M, WU Y, ZHANG S L, et al. Quantum dots: CsPbX₃Quantum dots for lighting and displays: room-temperature synthesis, photoluminescence superiorities, underlying origins and white light-emitting diodes(adv. funct. mater. 15/2016)[J]. Advanced Functional Materials, 2016, 26(15): 2584. DOI:10.1002/adfm.201670096.
[11] JEON N J, NOH J H, YANG W S, et al. Compositional engineering of perovskite materials for high-performance solar cells[J]. Nature, 2015, 517(7535): 476-480. DOI:10.1038/nature14133.
[12] SHOAIB M, ZHANG X H, WANG X X, et al. Directional growth of ultralong CsPbBr₃ perovskite nanowires for high-performance photodetectors[J]. Journal of the American Chemical Society, 2017, 139(44): 15592-15595. DOI:10.1021/jacs.7b08818.
[13] KULBAK M, CAHEN D, HODES G. How important is the organic part of lead halide perovskite photovoltaic cells? Efficient CsPbBr₃Cells[J]. The Journal of Physical Chemistry Letters, 2015, 6(13): 2452-2456. DOI:10.1021/acs.jpclett.5b00968.
[14] WANG Y, ZHANG T, KAN M, et al. Bifunctional stabilization of all-inorganic α-CsPbI₃ perovskite for 17% efficiency photovoltaics[J]. Journal of the American Chemical Society, 2018, 140(39): 12345-12348. DOI:10.1021/jacs.8b07927.
[15] TONG G Q, LI H, LI D T, et al. Dual-phase CsPbBr₃ -CsPb₂Br₅ perovskite thin films via vapor deposition for high-performance rigid and flexible photodetectors[J]. Small, 2018, 14(7): 1702523. DOI:10.1002/smll.201702523.
[16] SONG J Z, LI J H, LI X M, et al. Quantum dot light-emitting diodes based on inorganic perovskite cesium lead halides(CsPbX₃)[J]. Advanced Materials, 2015, 27(44): 7162-7167. DOI:10.1002/adma.201502567.
[17] YASSITEPE E, YANG Z Y, VOZNYY O, et al. Amine-free synthesis of cesium lead halide perovskite quantum dots for efficient light-emitting diodes[J]. Advanced Functional Materials, 2016, 26(47): 8757-8763. DOI:10.1002/adfm.201604580.
[18] DAVIS N J, TABACHNYK M, RICHTER J M, et al. Photon reabsorption in mixed CsPbCl₃: CsPbI₃ perovskite nanocrystal films for light-emitting diodes[J].Physical Chemistry C, 2017,121(7):3790-3796. DOI:10.1021/acs.jpcc.6b12828.
[19] ZOU C, HUANG C Y, SANEHIRA E M, et al. Highly stable cesium lead iodide perovskite quantum dot light-emitting diodes[J]. Nanotechnology, 2017, 28(45): 455201. DOI:10.1088/1361-6528/aa8b8b.
[20] LIN K, XING J, QUAN L N, et al. Perovskite light-emitting diodes with external quantum efficiency exceeding 20 per cent[J]. Nature, 2018, 562(7726): 245-248. DOI:10.1038/s41586-018-0575-3.
[21] JIANG C B, ZHONG Z M, LIU B Q, et al. Coffee-ring-free quantum dot thin film using inkjet printing from a mixed-solvent system on modified ZnO transport layer for light-emitting devices[J]. Acs Applied Materials & Interfaces, 2016, 8(39): 26162-26168. DOI:10.1021/acsami.6b08679.
[22] LI G P, WANG H, ZHANG T, et al. Solvent-polarity-engineered controllable synthesis of highly fluorescent cesium lead halide perovskite quantum dots and their use in white light-emitting diodes[J]. Advanced Functional Materials, 2016, 26(46): 8478-8486. DOI:10.1002/adfm.201603734.
[23] ZHENG M, LI Y, ZHANG Y J, et al. Solvatochromic fluorescent carbon dots as optic noses for sensing volatile organic compounds[J]. RSC Advances, 2016, 6(86): 83501-83504. DOI:10.1039/C6RA16055G.
[24] MEI J J, WANG F, WANG Y P, et al. Energy transfer assisted solvent effects on CsPbBr₃ quantum dots[J]. Journal of Materials Chemistry C, 2017, 5(42): 11076-11082. DOI:10.1039/C7TC03351F.
[25] LIU F, ZHANG Y, DING C, et al. Highly luminescent phase-stable CsPbI₃ perovskite quantum dots achieving near 100% absolute photoluminescence quantum yield[J]. ACS Nano, 2017, 11(10): 10373-10383. DOI:10.1021/acsnano.7b05442.
[26] MEI Q, ZHANG K, GUAN G, et al. Highly efficient photoluminescent graphene oxide with tunable surface properties[J]. Chemical Communications, 2010, 46(39): 7319-7321. DOI:10.1039/C0CC02374D.
[27] KONDO S, AMAYA K, SAITO T. In situ optical absorption spectroscopy of annealing behaviours of quench-deposited films in the binary system CsI PbI₂[J]. Journal of Physics Condensed Matter, 2003, 15(6): 971-977. DOI:10.1088/0953-8984/15/6/324.
[28] SUN C Y, WANG X Z, XU Y M, et al. Physical origins of high photoluminescence quantum yield in α-CsPbI₃ nanocrystals and their stability[J]. Applied Surface Science, 2020, 508: 145188. DOI:10.1016/j.apsusc.2019.145188.
[29] LIU Q H, WANG Y H, SUI N, et al. Exciton relaxation dynamics in photo-excited CsPbI3 perovskite nanocrystals[J]. Sci Rep, 2016, 6: 29442. DOI:10.1038/srep29442.
[30] DIROLL B T, ZHOU H, SCHALLER R D. Low-temperature absorption, photoluminescence, and lifetime of CsPbX₃(X = Cl, Br, I)nanocrystals[J]. Advanced Functional Materials, 2018, 28(30): 1800945. DOI:10.1002/adfm.201800945.
[31] HAO Y L, GAN Z X, ZHU X B, et al. Emission from trions in carbon quantum dots[J]. The Journal of Physical Chemistry C, 2015, 119(6): 2956-2962. DOI:10.1021/jp5114569.
[32] YU W, WANG X Z, LU W B, et al. Spectral characteristics of surface-plasmon-enhanced photoluminescence in nanocrystalline SiC films[J]. Europhys Lett, 2010, 89(4): 47006. DOI:10.1209/0295-5075/89/47006.
[33] SWARNKAR A, MARSHALL A R, SANEHIRA E M, et al. Quantum dot-induced phase stabilization of α-CsPbI₃ perovskite for high-efficiency photovoltaics[J]. Science, 2016, 354(6308): 92-95. DOI:10.1126/science.aag2700.

CsPbI₃量子点在不同极性溶剂的光学特性

Optical properties of CsPbI₃ quantum dots in different polar solvents

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