关键词: 钙钛矿, 原子层沉积, 工艺兼容性, 稳定性

Abstract: The diffusion reaction between the metal electrode and the halogen is an important factor of perovskite solar cell(PSC)degradation. Using atomic layer deposition(ALD)technology to deposit a dense buffer layer with good electrical performance between metal electrode and perovskite active layer is one of the preferred solutions to solve the above problems. This work studies the process compatibility of SnO₂ and TiO₂ films deposited on organohalide perovskite materials using ALD technology. The effects of tetra(dimethylamino)titanium(TDMATi)and tetra(dimethylamino)tin(TDMASn)pulses and water pulses at different temperatures on the structure of perovskite films are investigated by X-ray diffraction and ultraviolet-visible absorption spectroscopy, and the influence of the pulse times of different precursor sources and purging time on the film deposition mode are analyzed, and the optimized ALD processes of SnO₂- DOI:10.3969/j.issn.1000-1565.2022.04.006SnO₂和TiO₂薄膜在钙钛矿材料上的原子层沉积工艺罗浩,张慧玉,刘红燕,刘海旭,路万兵(河北大学 物理科学与技术学院,河北省光电信息材料重点实验室,河北 保定 071002)摘 要:金属电极与卤素之间的扩散反应是造成钙钛矿太阳电池(PSC)衰退的重要因素,而利用原子层沉积(ALD)技术在金属电极和钙钛矿活性层之间沉积致密且电学性能良好的缓冲层,是解决上述问题的优选方案之一.本文主要研究了利用ALD技术在金属有机卤化物钙钛矿材料上沉积SnO₂和TiO₂薄膜的工艺兼容性问题.通过X线衍射和紫外-可见吸收光谱等技术,表征了分别作为钛源和锡源的四(二甲氨基)钛(TDMATi)和四(二甲氨基)锡(TDMASn)脉冲以及不同温度下水脉冲对钙钛矿薄膜结构的影响,分析了不同前驱体源的脉冲及吹扫时间对薄膜沉积模式的影响,获得了与钙钛矿材料相兼容的SnO₂和TiO₂薄膜的优化ALD工艺.将优化后的SnO₂和TiO₂薄膜ALD工艺应用于倒置PSC制备,对电池的J-V曲线和大气环境下的稳定性测试结果表明,基于ALD技术沉积的SnO₂和TiO₂缓冲层的引入,使得PSC的稳定性明显改善,而且其功率转换效率也有所提高.关键词:钙钛矿;原子层沉积;工艺兼容性;稳定性中图分类号:O469 文献标志码:A 文章编号:1000-1565(2022)04-0370-06Atomic layer deposition process of SnO₂ and TiO₂ films on perovskite materialsLUO Hao, ZHANG Huiyu, LIU Hongyan, LIU Haixu, LU Wanbing(Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, China)Abstract: The diffusion reaction between the metal electrode and the halogen is an important factor of perovskite solar cell(PSC)degradation. Using atomic layer deposition(ALD)technology to deposit a dense buffer layer with good electrical performance between metal electrode and perovskite active layer is one of the preferred solutions to solve the above problems. This work studies the process compatibility of SnO₂ and TiO₂ films deposited on organohalide perovskite materials using ALD technology. The effects of tetra(dimethylamino)titanium(TDMATi)and tetra(dimethylamino)tin(TDMASn)pulses and water pulses at different temperatures on the structure of perovskite films are investigated by X-ray diffraction and ultraviolet-visible absorption spectroscopy, and the influence of the pulse times of different precursor sources and purging time on the film deposition mode are analyzed, and the optimized ALD processes of SnO₂- 收稿日期:2021-01-07 基金项目:河北省自然科学基金资助项目(E2021201014;F2017201101);中央引导地方科技发展资金项目(206Z1102G) 第一作者:罗浩(1992—),男,吉林松原人,河北大学在读硕士研究生,主要从事新能源光电功能材料研究. E-mail:1683209529@qq.com 通信作者:路万兵(1980—),男,河北保定人,河北大学副教授,博士,主要从事新能源光电功能材料研究.E-mail:wanbinglu@hbu.edu.cn第4期罗浩等:SnO₂和TiO₂薄膜在钙钛矿材料上的原子层沉积工艺and TiO₂ films compatible with perovskite materials are obtained. The inverted PSCs are fabricated by using the optimized SnO₂ and TiO₂ film ALD process, and the J-V curves and stability tests in atmospheric environment for the PSCs show that the introduction of SnO₂ and TiO₂ buffer layers deposited by ALD technology significantly improves the stability of PSCs, and their power conversion efficiency has also been improved.

Key words: perovskite, atomic layer deposition, process compatibility, stability