Ge纳米结构的制备技术与发光特性研究进展

doi:10.3969/j.issn.1000-1565.2008.01.024

摘要/Abstract

摘要： Si基纳米发光材料与器件的研究是目前半导体光电子技术领域中的一个活跃前沿.除了Si纳米晶粒、Si量子点和Si/SiO2超晶格等Si纳米结构之外,属于同族元素的Ge纳米结构也因其所具有的优异特性,而呈现出良好的发光性能.评述了Ge纳米结构的制备方法与发光特性在近年内取得的研究进展.

关键词: Ge纳米结构, 光致发光, 电致发光, 与氧相关的缺陷, 量子限制效应

中图分类号:

O734

张雷,彭英才,马蕾,徐卓,王侠. Ge纳米结构的制备技术与发光特性研究进展[J]. 河北大学学报(自然科学版), 2008, 28(1): 101-106.

ZHANG Lei,PENG Ying-cai,MA Lei,XU Zhuo,WANG Xia. Progress of the Fabricated Methods and Luminescent Properties of Ge Nanostructures[J]. Journal of Hebei University (Natural Science Edition), 2008, 28(1): 101-106.

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