[1] Song HZ., Li NS., Wu XL., Bao XM.. Strong ultraviolet photoluminescence from silicon oxide films prepared by magnetron sputtering [J]. Applied physics letters 1998, 3(3). [2] TONG J F, HSIAO H L, HWANG H L. Adjustable emissions from silicon - rich oxide films prepared by plasma - enhanced chemical-vapor deposition [J]. Applied Physics Letters 1999, 74(16). [3] V. A. Gritsenko, K. S. Zhuravlev, A. D. Milov, Hei Wong, R. W. M. Kwok, J. B. Xu. Silicon dots/clusters in silicon nitride: photoluminescence and electron spin resonance [J]. Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films 1999, 12(12). [4] Molinari M., Vergnat M., Rinnert H.. Visible photoluminescence in amorphous SiNx thin films prepared by reactive evaporation [J]. Applied physics letters 2000, 22(22). [5] Chen D, VINER J M, TAYLOR P C. Photoluminescence in nitrogen - rich a - SiNx:H [J]. Materials Research Society Symposium Proceedings 1992, 258. [6] Wei-Tang Li, David R. McKenzie, William D. McFall, Qi-Chu Zhang. Effect of sputtering-gas pressure on properties of silicon nitride films produced by helicon plasma sputtering [J]. Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films 2001, 1(1). [7] Wang Y., Han HX., Liao XB., Yue RF.. Raman study of structural order of a-SiNx : H and its change upon thermal annealing [J]. Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites 2001, 1/2(1/2). |