Threshold of nucleation barrier of spherical Si nanoparticle prepared by heat annealing

doi:10.3969/j.issn.1000-1565.2017.05.005

Abstract

Abstract: Amorphous Si films were prepared by pulsed laser ablation in vacuum at room temperature. These samples were heated by annealing furnace in order to transform into crystalline film. Threshold of nucleation barrier and mean diameter of Si nanoparticle were determined through the results of SEM, Raman and XRD, which were 850 ℃ and 15 nm, respectively. If the shape of nanoparticle is assumed to be ideal sphere, we can obtain the magnitude of threshold nucleation barrier for the nanoparticle through calculation, which is in the order of 10^-11 mJ.

Key words: pulsed laser ablation, heat annealing, nanoparticle, nucleation barrier

CLC Number:

TN304

DENG Zechao, FU Nian,CHU Lizhi, DING Xuecheng, FU Guangsheng, WANG Yinglong. Threshold of nucleation barrier of spherical Si nanoparticle prepared by heat annealing[J]. Journal of Hebei University (Natural Science Edition), 2017, 37(5): 471-475.

References

[1] KIM K, PARK J H, DOO S G, et al. Generation of size and structure controlled Si nanoparticles using pulse plasma for energy devices [J]. Thin Solid Films,2009, 517(14): 4184-4187. DOI:10.1016/j.tsf.2009.02.016.
[2] 梁伟华,郝东宁,丁学成,等.钛掺杂对纳米Si晶结构和光学性质的影响 [J]. 河北大学学报(自然科学版),2017,37(3):231-236. LIANG W H, HAO D N, DING X C, et al. Effects of Ti-doped on structures and optical properties of silicon nanocrystals [J].Journal of Hebei University(Natural Science Eition), 2017, 37(3): 231-236. DOI:10.3969/j.issn.1000-1565.2017.03.002.
[3] OUYANG Z, PILLAI S, BECK F, et al. Effective light trapping in polycrystalline silicon thin-film solar cells by means of rear localized surface plasmons [J]. Applied Physics Letters, 2010, 96(26): 1109-13. DOI:10.1063/1.3460288.
[4] 秦爱丽,王英龙,丁学成,等.脉冲激光烧蚀铕粒子速度劈裂的蒙特卡罗模拟 [J]. 河北大学学报(自然科学版),2014, 34(5):475-478. QIN A L,WANG Y L,DING X C,et al. Monte Carlo simulation of velocity splitting of europium ions produced by pulsed laser ablation [J].Journal of Hebei University(Natural Science Eition),2014, 34(5):475-478. DOI:10.3969/j.issn.1000-1565.2014.05.006.
[5] UMEZU I,SUGIMURA A,SUGIMURA. Formation of nanoscale fine-structured silicon by pulsed laser ablation in hydrogen background gas [J]. Physical Review B, 2007, 76(4):045328-1-10. DOI: 10.1103/PhysRevB.76.045328.
[6] WANG Y L, DENG Z C, FU G S, et al. The average size of Si nanoparticles prepared by pulsed laser ablation in the gas mixture of He/Ar, Ne/Ar or He/Ne [J]. Thin Solid Films, 2006, 515(4): 1897-1900. DOI: 10.1016/j.tsf.2006.07.031.
[7] KUO C C, YEH W C, CHEN J B, et al. Monitoring explosive crystallization phenomenon of amorphous silicon thin films during short pulse duration XeF excimer laser annealing using real-time optical diagnostic measurements [J]. Thin Solid Films, 2006, 515(4): 1651-1657. DOI: 10.1016/j.tsf.2006.05.046.
[8] MISHRA P, JAIN K P. Temperature-dependent Raman scattering studies in nanocrystalline silicon and finite-size effects [J]. Physical Review B, 2000, 62(22): 14790-14795. DOI: 10.1103/PhysRevB.62.14790.
[9] DONOVAN E P,SPAEPEN F,TURNBULL D,et al. Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantation [J]. Journal of Appllied Physics, 1985,57(6): 1795-1804. DOI: 10.1063/1.334406.
[10] PERSANS P D, RUPPERT A, ABELES B. Crystallization kinetics of amorphous Si/SiO₂ superlattice structures [J]. Journal of Non-Crystal Solids,1988, 102(1-3): 130-135. DOI: 10.1016/0022-3093(88)90123-8.
[11] TAGAMI T, WAKAYAMA Y, TANAKA S I. Influence of interfaces on crystal growth of Si in SiO₂/a-Si/SiO₂ layered Structures [J]. Japanese Journal of Applied Physics. 1997, 36(6B): L734-L736. DOI: 10.1016/0022-3093(88)90123-8.
[12] MCPHERSON J W, REDDY V K, MOGUL H C. Field-enhanced Si-Si bond-breakage mechanism for time-dependent dielectric breakdown in thin-film SiO₂ dielectrics [J]. Applied Physics Letters,1997, 71(8): 1101-1103. DOI: 10.1016/0022-3093(88)90123-8.