Abstract: Bismuth telluride(Bi₂Te₃)is a typical topological insulator, which has wide application in thermoelectric, optoelectronic and spintronic devices. In this paper, a series of Bi₂Te₃ films were synthesized on the n-type single crystal Si substrate with different thicknesses by pulse laser deposition technology and the- DOI:10.3969/j.issn.1000-1565.2021.05.005Bi₂Te₃/Si异质结中的侧向光伏效应王淑芳,乔双,马继奎(河北大学 物理科学与技术学院,河北省光电信息材料重点实验室,新能源光电器件国家地方联合工程实验室,河北 保定 071002)王淑芳 理学博士(2004年毕业于中国科学院物理研究所),河北大学物理科学与技术学院教授,博士生导师,国务院政府特殊津贴专家,宝钢优秀教师奖和河北省青年科技奖获得者.主要从事低维光电/热电材料制备与物性调控研究,主持或参与973/863项目、973前期项目、国家自然科学基金项目、河北省自然科学基金重点项目、河北省自然科学杰出青年基金项目等多项科研项目,以第一或通信作者在Nat Commun、Adv Science、Adv Funct Mater、PRB等著名学术期刊上发表SCI收录论文120余篇,获授权国家发明专利12项、转让3项.现兼任中国光学学会理事、中国光学学会光电技术专业委员会常委、中国材料学会热电材料与应用分会理事、河北省光学学会副理事长等职.摘 要:碲化铋(Bi₂Te₃)是一种典型的拓扑绝缘体材料,在热电、光电和自旋电子学领域具有广阔应用前景.本文采用脉冲激光沉积技术在Si衬底上制备了不同厚度的Bi₂Te₃薄膜,详细研究了Bi₂Te₃/Si异质结中的侧向光伏响应特性.结果表明,该异质结的侧向光伏响应强烈依赖于Bi₂Te₃层厚度,随厚度增加呈现先快速增加至一极值,然后逐渐减小的变化趋势.用不同波长和功率的激光照射测量时发现,该异质结具有405~808 nm的较宽响应波段,且位置灵敏度随激光功率增加而增大并最终趋于饱和,其中671 nm的侧向光伏响应性能最好,最高位置灵敏度达到3.4×10^-2 V/mm.以上结果为研发基于Bi₂Te₃的高灵敏、宽波段光位敏探测器提供了重要参考.关键词:Bi₂Te₃/Si;厚度调控;侧向光伏效应;宽波段;光位敏探测器中图分类号:TN362 文献标志码:A 文章编号:1000-1565(2021)05-0488-07Lateral photovoltaic effect in Bi₂Te₃/Si heterojunctionWANG Shufang, QIAO Shuang, MA Jikui(National-local Joint Engineering Laboratory of New Energy Photoelectric Devices, Hebei Key Laboratory of Optic-electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, China)Abstract: Bismuth telluride(Bi₂Te₃)is a typical topological insulator, which has wide application in thermoelectric, optoelectronic and spintronic devices. In this paper, a series of Bi₂Te₃ films were synthesized on the n-type single crystal Si substrate with different thicknesses by pulse laser deposition technology and the- 收稿日期:2021-05-15 基金项目:国家自然科学基金面上项目(51972094 );河北省自然科学基金杰出青年项目(F2018201198) 第一作者:王淑芳(1974—),女,河北张家口人,河北大学教授,博士生导师,主要从事新型光电/热电能量转换材料设计、物性调控及器件研究. E-mail:sfwang@hbu.edu.cn第5期王淑芳等:Bi₂Te₃/Si异质结中的侧向光伏效应lateral photovoltaic effect in them were well studied. The results show that the lateral photovoltage of the heterojunction is strongly dependent on the thickness of Bi₂Te₃ layer. With the increase of the thickness, the lateral photovoltage first increases rapidly to an extreme value, and then decreases gradually. When measured at different wavelengths and laser power, it is found that the heterojunction has a wide response band of 405—808 nm, and the position sensitivity increases with an increase of laser power and finally tends to reach saturation. Among them, the heterojunction shows the best lateral photovoltaic response at 671 nm, and the maximum position sensitivity reaches 3.4×10^-2 V/mm. This result provides an important experimental basis for the development of Bi₂Te₃ based high sensitivity and broad band light position sensitive detector.

Key words: Bi₂Te₃/Si, thickness modulation, lateral photovoltaic effect, broadband, light position sensitive detector