Application of novel ferroelectric thin films in MFIS devices

doi:10.3969/j.issn.1000-1565.2023.04.004

Abstract

Abstract: Ferroelectric Na_0.5Y_0.5TiO₃(NYTO)film is used as the insulating layer of MFIS(Metal-Ferroelectric-Insulate-Semiconductor)capacitors by its high dielectric properties. The Pt/ Pb(Zr_0.2Ti_0.8)O₃/ NYTO/ Si structure capacitors were prepared, and their XRD, SEM, C-V, and I-V characterristics were tested and analyzed. The dependence of C-V storage window on application voltage and insulation layer thickness were studied separately. The results show that the device has a large memory window when the thickness of the insulation layer is 40 nm. The memory window can reach 13 V with 32 V applied voltage. The MFIS capacitor has low leakage current density of 1.08×10^-6 A/cm². The conduction mechanism of leakage current conforms to space charge limited current conduction mechanism.

Key words: novel ferroelectric film, MFIS capacitors, memory window, C-V characteristics

CLC Number:

O469

WANG Shuyu,LU Chunguang, YUAN Qiuting,QIU Jiajun,FU Yueju,CAI Shuzhen,FU Guangsheng. Application of novel ferroelectric thin films in MFIS devices[J]. Journal of Hebei University(Natural Science Edition), 2023, 43(4): 364-368.

References

[1] BEZ R. Innovative technologies for high density non-volatile semiconductor memories[J]. Microelectron Eng, 2005, 80: 249-255. DOI: 10.1016/j.mee.2005.04.076.
[2] WU S Y. Memory retention and switching behavior of metal-ferroelectric-semiconductor transistors[J]. Ferroelectrics, 1976, 11(1): 379-383. DOI: 10.1080/00150197608236584.
[3] WU S Y. A new ferroelectric memory device, metal-ferroelectric-semiconductor transistor[J]. IEEE Trans Electron Devices, 1974, 21(8): 499-504. DOI: 10.1109/T-ED.1974.17955.
[4] ISHIWARA H. Current status and prospects of FET-type ferroelectric memories[C] //1999 57th Annual Device Research Conference Digest(Cat. No.99TH8393), June 23-23, 1999, Santa Barbara, CA, USA. IEEE, 2002: 6-9. DOI: 10.1109/DRC.1999.806306.
[5] LUE H T, WU C J, TSENG T Y. Device modeling of ferroelectric memory field-effect transistor for the application of ferroelectric random access memory[J]. IEEE Trans Ultrason Ferroelectr Freq Control, 2003, 50(1): 5-14. DOI: 10.1109/TUFFC.2003.1176521.
[6] TSANG C H, WONG C K, SHIN F G. Modeling saturated and unsaturated ferroelectric hysteresis loops: an analytical approach[J]. J Appl Phys, 2005, 98(8): 084103. DOI: 10.1063/1.2103417.
[7] KOHLSTEDT H, MUSTAFA Y, GERBER A, et al. Current status and challenges of ferroelectric memory devices[J]. Microelectron Eng, 2005, 80: 296-304. DOI: 10.1016/j.mee.2005.04.084.
[8] SCOTT J F. Applications of modern ferroelectrics[J]. Science, 2007, 315(5814): 954-959. DOI: 10.1126/science.1129564.
[9] COPIE O, CHEVALIER N, LE RHUN G, et al. Adsorbate screening of surface charge of microscopic ferroelectric domains in Sol-gel PbZr_0.2Ti_0.8O₃ thin films[J]. ACS Appl Mater Interfaces, 2017, 9(34): 29311-29317. DOI: 10.1021/acsami.7b08925.
[10] LUE H T, WU C J, TSENG T Y. Device modeling of ferroelectric memory field-effect transistor(FeMFET)[J]. IEEE Trans Electron Devices, 2002, 49(10): 1790-1798. DOI: 10.1109/TED.2002.803626.
[11] KUMARI N, PARUI J, VARMA K B R, et al. C-V studies on metal-ferroelectric bismuth vanadate(Bi2VO5.5)-semiconductor structure[J]. Solid State Commun, 2006, 137(10): 566-569. DOI: 10.1016/j.ssc.2005.11.043.
[12] CHEN H Y, WU J M, HUANG H E, et al. Characteristics of(Pb, Sr)TiO₃/ZrO₂ structures on Si and SiON/Si substrates[J]. Appl Phys Lett, 2007, 90(11): 112907. DOI: 10.1063/1.2712807.
[13] TANG M H, ZHOU Y C, ZHENG X J, et al. Structural and electrical properties of metal-ferroelectric-insulator-semiconductor transistors using a Pt/Bi_3.25Nd_0.75Ti₃O₁₂/Y₂O₃/Si structure[J]. Solid State Electron, 2007, 51(3): 371-375. DOI: 10.1016/j.sse.2006.11.014.
[14] LEE S K, KIM Y T, KIM S I, et al. Effects of coercive voltage and charge injection on memory windows of metal-ferroelectric-semiconductor and metal-ferroelectric-insulator-semiconductor gate structures[J]. J Appl Phys, 2002, 91(11): 9303-9307. DOI: 10.1063/1.1467629.
[15] GRUVERMAN A, WU D, LU H, et al. Tunneling electroresistance effect in ferroelectric tunnel junctions at the nanoscale[J]. Nano Lett, 2009, 9(10): 3539-3543. DOI: 10.1021/nl901754t. (