Journal of Hebei University(Natural Science Edition) ›› 2023, Vol. 43 ›› Issue (5): 463-469.DOI: 10.3969/j.issn.1000-1565.2023.05.003

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Effect of Ga3+ on the luminescence property of Mg14Ge5O24:Cr near infrared material

XU Yanmei1,QIN Xiaodong1,LIANG Shaolong1,WANG Jiarui1,WANG Xuejiao2,WANG Zhijun2   

  1. 1.Department of Mathematics and Physics, North China Electric Power Unversity, Baoding 071003, China; 2.College of Physics Science and Technology, Hebei University, Baoding 071002, China
  • Received:2023-01-09 Online:2023-09-25 Published:2023-10-25

Abstract: Mg14Ge5O24:Cr near-infrared(NIR)phosphors were synthesized by the high-temperature solid-phase method to achieve the coexistence of Cr3+ and Cr4+ valence luminescence. The crystalline phases of the samples were analyzed using XRD and GASA refinement software. The material has two luminescence centers, one from Cr3+ occupying the octahedral Ge4+ position with an emission band in the NIR I region and a half-peak width up to 256 nm, and the other from Cr4+ occupying the tetrahedral Ge4+ position with an emission band in the NIR II region and a half-peak width up to 266 nm. The luminescence properties of the material were analyzed by low-temperature spectra and lifetime decay curves. The modulation of Cr3+ and Cr4+ luminescence can be achieved by using Ga3+ instead of Ge4+. The addition of large radius Ga3+ ions generates new lattice sites, which affects the overall crystal field intensity, and a phosphor with more intense luminescence in the NIR I region is obtained.

Key words: luminescence, near infrared, Mg14Ge5O24:Cr, Ga3+

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