河北大学学报(自然科学版) ›› 2016, Vol. 36 ›› Issue (3): 232-236.DOI: 10.3969/j.issn.1000-1565.2016.03.003

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InAs/GaAs量子点激光器增益特性

魏育新,陈蕊丽   

  • 收稿日期:2015-04-17 出版日期:2016-05-25 发布日期:2016-05-25
  • 作者简介:魏育新(1974—),男,江苏徐州人,中国人民公安大学讲师,博士,主要从事半导体器件研究. E-mail:weiyuxin@ppsuc.edu.cn.
  • 基金资助:
    中国人民公安大学基本科研业务费资助项目(2014JKF0013)

Gain characteristics of InAs/GaAs quantum dot lasers

WEI Yuxin,CHEN Ruili   

  1. College of Criminal Science and Technology, People’s Public SecurityUniversity of China, Beijing 100038, China
  • Received:2015-04-17 Online:2016-05-25 Published:2016-05-25

摘要: 由于载流子在3个维度受到量子限制,半导体量子点具有类似于原子的分立能级,并展现出许多独特的光学和电学性能.实验研制了InAs/GaAs量子点半导体激光器,分别采用傅里叶级数展开方法和Hakki-Paoli方法准确地测量和表征量子点激光器的模式增益,分析了其增益与损耗.实验结果表明Hakki-Paoli方法受测量系统分辨率影响大,在增益谱峰值附近由其得到的增益明显偏低.采用傅里叶级数展开方法并由测试系统响应函数进行修正,可以获得更准确的增益谱.

关键词: 半导体激光器, 量子点, 模式增益

Abstract: Due to the atom-like state densities,quantum-dot(QD)lasers have a number of unique optical and electronic properties.In this work,InAs/GaAs quantum dot semiconductor lasers are fabricated,and their mode gain spectra are measured by the Fourier series expansion method and the Hakki-Paoli method.Hakki-Paoli method is found to be influenced by the resolution of the measurement system,leading to underestimated gain.On the other hand, we found that Fourier Series Expansion method with a correction factor derived from the response function of the measurement system can be used to obtain gain spectrum with high accuracy.

Key words: semiconductor laser, quantum dot, mode gain

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