Effect of NiO photocathode film thickness on the performance of quantum dot sensitized solar cells

doi:10.3969/j.issn.1000-1565.2023.05.007

Abstract

Abstract: This work is to explore the best preparation conditions of photoanode film materials in quantum dot sensitized solar cells(QDSSCs). P-type NiO nanoparticles are synthetized by one-step high temperature hydrothermal method, which is then screen printed on conductive glass to form NiO films. NiO films can be used as photocathode for quantum dot sensitized solar cells. Combine with Cu₂S counter electrode, solar cells are assembled. NiO photocathode films with different film thicknesses were studied and tested repeatedly. The results show that the highest photoelectric conversion efficiency is achieved when the film thickness of NiO film material is 21 μm.

Key words: quantum dot-sensitized solar cell, NiO film, material film thickness, electrochemical performance

CLC Number:

TQ172

WANG Senyang,ZHANG Zhaoyou,SUN Jie,LIANG Chengyang,CAO Ying,GENG Shitong,LI Ling. Effect of NiO photocathode film thickness on the performance of quantum dot sensitized solar cells[J]. Journal of Hebei University(Natural Science Edition), 2023, 43(5): 492-499.

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