Gain characteristics of InAs/GaAs quantum dot lasers

doi:10.3969/j.issn.1000-1565.2016.03.003

Abstract

Abstract: Due to the atom-like state densities,quantum-dot(QD)lasers have a number of unique optical and electronic properties.In this work,InAs/GaAs quantum dot semiconductor lasers are fabricated,and their mode gain spectra are measured by the Fourier series expansion method and the Hakki-Paoli method.Hakki-Paoli method is found to be influenced by the resolution of the measurement system,leading to underestimated gain.On the other hand, we found that Fourier Series Expansion method with a correction factor derived from the response function of the measurement system can be used to obtain gain spectrum with high accuracy.

Key words: semiconductor laser, quantum dot, mode gain

CLC Number:

TN248.4

WEI Yuxin,CHEN Ruili. Gain characteristics of InAs/GaAs quantum dot lasers[J]. Journal of Hebei University (Natural Science Edition), 2016, 36(3): 232-236.

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